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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI6415DQ-T1-BE3 Vishay Siliconix

SI6415DQ-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix

5,680 -
Datasheet - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 19mOhm @ 6.5A, 10V 1V @ 250µA 70 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
IRFIBC20G Vishay Siliconix

IRFIBC20G

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix

7,153 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFP15N60LPBF Vishay Siliconix

IRFP15N60LPBF

MOSFET N-CH 600V 15A TO247-3

Vishay Siliconix

8,976 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 460mOhm @ 9A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 2720 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SI7742DP-T1-GE3 Vishay Siliconix

SI7742DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix

9,789 -
Datasheet SkyFET®, TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 115 nC @ 10 V ±20V 5300 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJ420DP-T1-GE3 Vishay Siliconix

SIJ420DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

Vishay Siliconix

5,706 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 2.6mOhm @ 15A, 10V 2.4V @ 250µA 90 nC @ 10 V ±20V 3630 pF @ 10 V - 4.8W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHP24N65EF-GE3 Vishay Siliconix

SIHP24N65EF-GE3

MOSFET N-CH 650V 24A TO220AB

Vishay Siliconix

6,873 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±20V 2656 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHF35N60E-GE3 Vishay Siliconix

SIHF35N60E-GE3

MOSFET N-CHANNEL 600V 32A TO220

Vishay Siliconix

9,122 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHP16N50C-BE3 Vishay Siliconix

SIHP16N50C-BE3

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix

6,992 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHA24N65EF-E3 Vishay Siliconix

SIHA24N65EF-E3

MOSFET N-CHANNEL 650V 24A TO220

Vishay Siliconix

9,690 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRFD9220 Vishay Siliconix

IRFD9220

MOSFET P-CH 200V 560MA 4DIP

Vishay Siliconix

8,776 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 560mA (Ta) 10V 1.5Ohm @ 340mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
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FETs, MOSFETs FAQ

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