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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFBF20 Vishay Siliconix

IRFBF20

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix

2,790 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBF30 Vishay Siliconix

IRFBF30

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix

4,383 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFBG30 Vishay Siliconix

IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix

3,547 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFI830G Vishay Siliconix

IRFI830G

MOSFET N-CH 500V 3.1A TO220-3

Vishay Siliconix

3,482 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 10V 1.5Ohm @ 1.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRF540 Vishay Siliconix

IRF540

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix

5,533 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF644 Vishay Siliconix

IRF644

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix

5,279 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF734 Vishay Siliconix

IRF734

MOSFET N-CH 450V 4.9A TO220AB

Vishay Siliconix

5,138 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF740A Vishay Siliconix

IRF740A

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

8,118 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF830A Vishay Siliconix

IRF830A

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix

9,909 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF840A Vishay Siliconix

IRF840A

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

9,875 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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