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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFP450LC Vishay Siliconix

IRFP450LC

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix

7,572 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFP460LC Vishay Siliconix

IRFP460LC

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

4,966 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRF730AL Vishay Siliconix

IRF730AL

MOSFET N-CH 400V 5.5A I2PAK

Vishay Siliconix

3,398 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRFI9634G Vishay Siliconix

IRFI9634G

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix

5,967 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRF520STRR Vishay Siliconix

IRF520STRR

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix

6,925 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF530L Vishay Siliconix

IRF530L

MOSFET N-CH 100V 14A TO262

Vishay Siliconix

2,346 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - - -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF540L Vishay Siliconix

IRF540L

MOSFET N-CH 100V 28A TO262

Vishay Siliconix

4,954 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - - -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF614L Vishay Siliconix

IRF614L

MOSFET N-CH 250V 2.7A TO262

Vishay Siliconix

7,731 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-262
IRF624L Vishay Siliconix

IRF624L

MOSFET N-CH 250V 4.4A I2PAK

Vishay Siliconix

5,797 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRF630L Vishay Siliconix

IRF630L

MOSFET N-CH 200V 9A I2PAK

Vishay Siliconix

3,792 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole I2PAK
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FETs, MOSFETs FAQ

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