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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2N6660JTXL02 Vishay Siliconix

2N6660JTXL02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

8,088 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
2N6660JTXV02 Vishay Siliconix

2N6660JTXV02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

9,980 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
2N6661JAN02 Vishay Siliconix

2N6661JAN02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

7,635 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
2N6661JTXL02 Vishay Siliconix

2N6661JTXL02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

6,235 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
2N6661JTXV02 Vishay Siliconix

2N6661JTXV02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

6,269 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
IRFD113 Vishay Siliconix

IRFD113

MOSFET N-CH 60V 800MA 4DIP

Vishay Siliconix

2,644 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD213 Vishay Siliconix

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Vishay Siliconix

8,412 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD9123 Vishay Siliconix

IRFD9123

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix

8,128 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) - 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V - 390 pF @ 25 V - - - - - Through Hole 4-HVMDIP
IRFP27N60K Vishay Siliconix

IRFP27N60K

MOSFET N-CH 600V 27A TO247-3

Vishay Siliconix

5,406 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 220mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 4660 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SI4196DY-T1-GE3 Vishay Siliconix

SI4196DY-T1-GE3

MOSFET N-CH 20V 8A 8SO

Vishay Siliconix

8,644 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 27mOhm @ 8A, 4.5V 1V @ 250µA 22 nC @ 8 V ±8V 830 pF @ 10 V - 2W (Ta), 4.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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FETs, MOSFETs FAQ

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