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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFBC40STRLPBF Vishay Siliconix

IRFBC40STRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

371 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBC40ASPBF Vishay Siliconix

IRFBC40ASPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

124 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SUP57N20-33-E3 Vishay Siliconix

SUP57N20-33-E3

MOSFET N-CH 200V 57A TO220AB

Vishay Siliconix

401 -
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 57A (Tc) 10V 33mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFP048PBF Vishay Siliconix

IRFP048PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix

392 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
SIJH800E-T1-GE3 Vishay Siliconix

SIJH800E-T1-GE3

N-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

4,154 -
Datasheet TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 29A (Ta), 299A (Tc) 7.5V, 10V 1.55mOhm @ 20A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 10230 pF @ 40 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHG24N80AEF-GE3 Vishay Siliconix

SIHG24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

372 -
Datasheet EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHG73N60AE-GE3 Vishay Siliconix

SIHG73N60AE-GE3

MOSFET N-CH 600V 60A TO247AC

Vishay Siliconix

500 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 40mOhm @ 36.5A, 10V 4V @ 250µA 394 nC @ 10 V ±30V 5500 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP100N60E-GE3 Vishay Siliconix

SIHP100N60E-GE3

MOSFET N-CH 600V 30A TO220AB

Vishay Siliconix

3,000 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHG080N60E-GE3 Vishay Siliconix

SIHG080N60E-GE3

E SERIES POWER MOSFET TO-247AC,

Vishay Siliconix

224 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP065N60E-GE3 Vishay Siliconix

SIHP065N60E-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix

872 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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