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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHK075N60EF-T1GE3 Vishay Siliconix

SIHK075N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

1,926 -
Datasheet EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
SIHF074N65E-GE3 Vishay Siliconix

SIHF074N65E-GE3

E SERIES POWER MOSFET TO-220 FUL

Vishay Siliconix

988 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHP074N65E-GE3 Vishay Siliconix

SIHP074N65E-GE3

E SERIES POWER MOSFET TO-220AB,

Vishay Siliconix

1,000 -
Datasheet E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHG47N65E-GE3 Vishay Siliconix

SIHG47N65E-GE3

MOSFET N-CH 650V 47A TO247AC

Vishay Siliconix

486 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±30V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP054N65E-GE3 Vishay Siliconix

SIHP054N65E-GE3

E SERIES POWER MOSFET TO-220AB,

Vishay Siliconix

1,037 -
Datasheet E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 58mOhm @ 20A, 10V 5V @ 250µA 108 nC @ 20 V ±30V 3769 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHK055N60EF-T1GE3 Vishay Siliconix

SIHK055N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2,040 -
Datasheet EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
MXP120A080FW-GE3 Vishay Siliconix

MXP120A080FW-GE3

SILICON CARBIDE MOSFET

Vishay Siliconix

540 -
Datasheet MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 18V, 20V 100mOhm @ 20A, 20V 2.69V @ 5mA 47.3 nC @ 18 V +22V, -10V 1156 pF @ 800 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
SIHG64N65E-GE3 Vishay Siliconix

SIHG64N65E-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix

481 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SI2301BDS-T1-BE3 Vishay Siliconix

SI2301BDS-T1-BE3

P-CHANNEL 2.5-V (G-S) MOSFET

Vishay Siliconix

3,800 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±8V 375 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI2301BDS-T1-E3 Vishay Siliconix

SI2301BDS-T1-E3

MOSFET P-CH 20V 2.2A SOT23-3

Vishay Siliconix

3,000 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±8V 375 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
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FETs, MOSFETs FAQ

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