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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDFM2P110 Fairchild Semiconductor

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

Fairchild Semiconductor

2,879 -
Datasheet PowerTrench® 6-WDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFET 3x3mm
FDS6670A Fairchild Semiconductor

FDS6670A

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2,525 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 30 nC @ 5 V ±20V 2220 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDD8770 Fairchild Semiconductor

FDD8770

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

41,479 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 3720 pF @ 13 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQU8P10TU Fairchild Semiconductor

FQU8P10TU

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

27,370 -
Datasheet QFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 530mOhm @ 3.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FDD8896 Fairchild Semiconductor

FDD8896

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

850,700 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 94A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF3N25 Fairchild Semiconductor

FQPF3N25

MOSFET N-CH 250V 2.3A TO220F

Fairchild Semiconductor

204,011 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 2.2Ohm @ 1.15A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDD8447L Fairchild Semiconductor

FDD8447L

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

18,050 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 15.2A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 14A, 10V 3V @ 250µA 52 nC @ 10 V ±20V 1970 pF @ 20 V - 3.1W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQU5N60CTU Fairchild Semiconductor

FQU5N60CTU

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

4,040 -
Datasheet QFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2.8A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FDD8880_F054 Fairchild Semiconductor

FDD8880_F054

1-ELEMENT, N-CHANNEL POWER MOSFE

Fairchild Semiconductor

13,660 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDU6N50TU Fairchild Semiconductor

FDU6N50TU

MOSFET N-CH 500V 6A I-PAK

Fairchild Semiconductor

4,579 -
Datasheet UniFET™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 900mOhm @ 3A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 940 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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FETs, MOSFETs FAQ

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