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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FCH35N60 Fairchild Semiconductor

FCH35N60

MOSFET N-CH 600V 35A TO247-3

Fairchild Semiconductor

8,123 -
Datasheet SuperMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
FDD6530A Fairchild Semiconductor

FDD6530A

MOSFET N-CH 20V 21A TO252

Fairchild Semiconductor

3,876 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 21A (Ta) 2.5V, 4.5V 32mOhm @ 8A, 4.5V 1.2V @ 250µA 9 nC @ 4.5 V ±8V 710 pF @ 10 V - 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FDS86540 Fairchild Semiconductor

FDS86540

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

8,040 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta) 8V, 10V 4.5mOhm @ 18A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6410 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FCPF36N60NT Fairchild Semiconductor

FCPF36N60NT

MOSFET N-CH 600V 36A TO220F

Fairchild Semiconductor

4,064 -
Datasheet SupreMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDD3706 Fairchild Semiconductor

FDD3706

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2,045 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 14.7A (Ta), 50A (Tc) 2.5V, 10V 9mOhm @ 16.2A, 10V 1.5V @ 250µA 23 nC @ 4.5 V ±12V 1882 pF @ 10 V - 3.8W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FDD8874 Fairchild Semiconductor

FDD8874

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

4,034 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQP3P20 Fairchild Semiconductor

FQP3P20

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

6,074 -
Datasheet QFET® TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FDMC8327L Fairchild Semiconductor

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

5,102 -
Datasheet PowerTrench® 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1850 pF @ 20 V - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
FQP9N90C Fairchild Semiconductor

FQP9N90C

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

8,277 -
Datasheet QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.4Ohm @ 4A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2730 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SI3443DV Fairchild Semiconductor

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Fairchild Semiconductor

5,347 -
Datasheet HEXFET® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro6™(TSOP-6)
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FETs, MOSFETs FAQ

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