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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDZ299P Fairchild Semiconductor

FDZ299P

MOSFET P-CH 20V 4.6A 9BGA

Fairchild Semiconductor

9,000 -
Datasheet PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 55mOhm @ 4.6A, 4.5V 1.5V @ 250µA 9 nC @ 4.5 V ±12V 742 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (2x2.1)
SFU9210TU Fairchild Semiconductor

SFU9210TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,740 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 1.6A (Tc) 10V 3Ohm @ 800mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 285 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
HUF76619D3S Fairchild Semiconductor

HUF76619D3S

MOSFET N-CH 100V 18A TO252AA

Fairchild Semiconductor

4,657 -
Datasheet UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 4.5V, 10V 85mOhm @ 18A, 10V 3V @ 250µA 29 nC @ 10 V ±16V 767 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF2N30 Fairchild Semiconductor

FQPF2N30

MOSFET N-CH 300V 1.34A TO220F

Fairchild Semiconductor

4,057 -
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 1.34A (Tc) 10V 3.7Ohm @ 670mA, 10V 5V @ 250µA 5 nC @ 10 V ±30V 130 pF @ 25 V - 16W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF3P20 Fairchild Semiconductor

FQPF3P20

MOSFET P-CH 200V 2.2A TO220F

Fairchild Semiconductor

4,000 -
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.2A (Tc) 10V 2.7Ohm @ 1.1A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQI7N10LTU Fairchild Semiconductor

FQI7N10LTU

MOSFET N-CH 100V 7.3A I2PAK

Fairchild Semiconductor

4,000 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Tc) 5V, 10V 350mOhm @ 3.65A, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
IRFR9110TF Fairchild Semiconductor

IRFR9110TF

100V P-CHANNEL MOSFET

Fairchild Semiconductor

3,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 290 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
FQT4N20TF Fairchild Semiconductor

FQT4N20TF

MOSFET N-CH 200V 850MA SOT223-4

Fairchild Semiconductor

2,363 -
Datasheet - TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 850mA (Tc) 10V 1.4Ohm @ 425mA, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 2.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
FQD3N30TF Fairchild Semiconductor

FQD3N30TF

MOSFET N-CH 300V 2.4A DPAK

Fairchild Semiconductor

1,970 -
Datasheet QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V 2.4A (Tc) 10V 2.2Ohm @ 1.2A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
SSU2N60BTU Fairchild Semiconductor

SSU2N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,869 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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FETs, MOSFETs FAQ

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