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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FDP030N06B Fairchild Semiconductor

FDP030N06B

1-ELEMENT, N-CHANNEL, MOS FET

Fairchild Semiconductor

800 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDS6672A Fairchild Semiconductor

FDS6672A

MOSFET N-CH 30V 12.5A 8SOIC

Fairchild Semiconductor

224,608 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 8mOhm @ 14A, 10V 2V @ 250µA 46 nC @ 4.5 V ±12V 5070 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDB2670 Fairchild Semiconductor

FDB2670

MOSFET N-CH 200V 19A TO263AB

Fairchild Semiconductor

3,500 -
Datasheet PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
HUF76443S3ST Fairchild Semiconductor

HUF76443S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

800 -
Datasheet UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDS4080N3 Fairchild Semiconductor

FDS4080N3

MOSFET N-CH 40V 13A 8SO

Fairchild Semiconductor

37,820 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 13A (Ta) 10V 10.5mOhm @ 13A, 10V 5V @ 250µA 40 nC @ 10 V ±20V 1750 pF @ 20 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDS3670 Fairchild Semiconductor

FDS3670

MOSFET N-CH 100V 6.3A 8SOIC

Fairchild Semiconductor

25,000 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.3A (Ta) 6V, 10V 32mOhm @ 6.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDS4072N7 Fairchild Semiconductor

FDS4072N7

MOSFET N-CH 40V 12.4A 8SO

Fairchild Semiconductor

9,775 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 12.4A (Ta) 4.5V, 10V 9mOhm @ 13.7A, 10V 3V @ 250µA 46 nC @ 4.5 V ±12V 4299 pF @ 20 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDS4080N7 Fairchild Semiconductor

FDS4080N7

MOSFET N-CH 40V 13A 8SO

Fairchild Semiconductor

9,444 -
Datasheet PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 13A (Ta) 10V 10mOhm @ 13A, 10V 5V @ 250µA 40 nC @ 10 V ±20V 1750 pF @ 20 V - 3.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
HUF76443S3S Fairchild Semiconductor

HUF76443S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

400 -
Datasheet UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDI8441 Fairchild Semiconductor

FDI8441

MOSFET N-CH 40V 26A/80A I2PAK

Fairchild Semiconductor

40,623 -
Datasheet PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 80A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 280 nC @ 10 V ±20V 15000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
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FETs, MOSFETs FAQ

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