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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RFD3N08L Harris Corporation

RFD3N08L

N-CHANNEL POWER MOSFET

Harris Corporation

1,346 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 1.5A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRF613 Harris Corporation

IRF613

N-CHANNEL POWER MOSFET

Harris Corporation

2,940 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFU110 Harris Corporation

IRFU110

4.7A 100V 0.540 OHM N-CHANNEL

Harris Corporation

2,825 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
RFP4N06 Harris Corporation

RFP4N06

N-CHANNEL POWER MOSFET

Harris Corporation

1,079 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRF523 Harris Corporation

IRF523

N-CHANNEL POWER MOSFET

Harris Corporation

2,608 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
RFD3N08LSM9A Harris Corporation

RFD3N08LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

2,425 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 3A, 5V 2.5V @ 250µA 8.5 nC @ 10 V ±10V 125 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IRFU9110 Harris Corporation

IRFU9110

3.1A 100V 1.200 OHM P-CHANNEL

Harris Corporation

1,735 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
RFP14N06L Harris Corporation

RFP14N06L

N-CHANNEL POWER MOSFET

Harris Corporation

1,085 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IRFD9110 Harris Corporation

IRFD9110

0.7A 100V 1.200 OHM P-CHANNEL

Harris Corporation

11,617 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-DIP, Hexdip, HVMDIP
IRFR121 Harris Corporation

IRFR121

N-CHANNEL POWER MOSFET

Harris Corporation

2,880 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A - - - - - - - - - - - Surface Mount TO-252 (DPAK)
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