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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
HUF75333S3 Harris Corporation

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation

1,257 -
Datasheet UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFD9113 Harris Corporation

IRFD9113

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Harris Corporation

1,090 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-DIP, Hexdip, HVMDIP
IRF9533 Harris Corporation

IRF9533

P-CHANNEL POWER MOSFET

Harris Corporation

11,834 -
Datasheet - TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 80 V 10A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD213 Harris Corporation

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Harris Corporation

5,563 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
RF1S23N06LESM Harris Corporation

RF1S23N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

5,549 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 23A - - - - - - - - - - - Surface Mount TO-263AB
HUF75329P3 Harris Corporation

HUF75329P3

MOSFET N-CH 55V 49A TO220-3

Harris Corporation

3,077 -
Datasheet UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RF1S17N06LSM Harris Corporation

RF1S17N06LSM

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation

4,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 17A - - - - - - - - - - - Surface Mount TO-263AB
RF1S25N06SM Harris Corporation

RF1S25N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

3,005 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 25A - - - - - - - - - - - Surface Mount TO-263AB
RFD16N03LSM9A Harris Corporation

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1,540 -
Datasheet - - Bulk Active - - - - - - - - - - - - - - - - -
IRF9510 Harris Corporation

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation

1,187 -
Datasheet - TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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