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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXFH21N50F IXYS

IXFH21N50F

MOSFET N-CH 500V 21A TO247

IXYS

3,279 -
Datasheet HiPerRF™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 250mOhm @ 10.5A, 10V 5.5V @ 4mA 77 nC @ 10 V ±20V 2600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
IXFK21N100F IXYS

IXFK21N100F

MOSFET N-CH 1000V 21A TO264

IXYS

8,174 -
Datasheet HiPerRF™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 500mOhm @ 10.5A, 10V 5.5V @ 4mA 160 nC @ 10 V ±20V 5500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA
IXFN55N50F IXYS

IXFN55N50F

MOSFET N-CH 500V 55A SOT227B

IXYS

5,033 -
Datasheet HiPerFET™, F Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 85mOhm @ 27.5A, 10V 5.5V @ 8mA 195 nC @ 10 V ±20V 6700 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFD15N100-8X IXYS

IXFD15N100-8X

MOSFET N-CH

IXYS

6,544 -
Datasheet - - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFD40N30Q-72 IXYS

IXFD40N30Q-72

MOSFET N-CHANNEL 300V DIE

IXYS

6,254 -
Datasheet HiPerFET™ Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V - - - - - - - - - - - - - Die
IXFD80N10Q-8XQ IXYS

IXFD80N10Q-8XQ

MOSFET N-CHANNEL 100V DIE

IXYS

9,640 -
Datasheet HiPerFET™ Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V - - - - - - - - - 150°C (TJ) - - - Die
IXFH14N100Q IXYS

IXFH14N100Q

MOSFET N-CH 1000V 14A TO247AD

IXYS

3,440 -
Datasheet HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 750mOhm @ 7A, 10V 5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
IXFH1799 IXYS

IXFH1799

MOSFET N-CH TO-247AD

IXYS

2,279 -
Datasheet - - Tube Obsolete - - - - - - - - - - - - - - - - -
IXFH32N48 IXYS

IXFH32N48

MOSFET N-CH 480V 32A TO247AD

IXYS

7,075 -
Datasheet HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 480 V 32A (Tc) 10V 130mOhm @ 15A, 10V 4V @ 4mA 300 nC @ 10 V ±20V 5200 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
IXFH32N48Q IXYS

IXFH32N48Q

MOSFET N-CH 480V 32A TO247AD

IXYS

2,538 -
Datasheet HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 480 V 32A (Tc) 10V 130mOhm @ 15A, 10V 4V @ 4mA 300 nC @ 10 V ±20V 5200 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.

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