PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQE004NE1LM7CGATMA1 Infineon Technologies

IQE004NE1LM7CGATMA1

TRENCH <= 40V

Infineon Technologies

9,900 -
Datasheet OptiMOS™ 7 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TTFN-9-3
ISC078N12NM6ATMA1 Infineon Technologies

ISC078N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,885 -
Datasheet OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 13.2A (Ta), 85A (Tc) 8V, 10V 7.8mOhm @ 37A, 10V 3.6V @ 49.6µA 26 nC @ 10 V ±20V 2000 pF @ 60 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SuperSO8
IQE004NE1LM7ATMA1 Infineon Technologies

IQE004NE1LM7ATMA1

TRENCH <= 40V

Infineon Technologies

4,360 -
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-5
NTMYS2D1N04CLTWG onsemi

NTMYS2D1N04CLTWG

MOSFET N-CH 40V 258A

onsemi

3,000 -
Datasheet - SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - 29A (Ta), 132A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
PJQ5540V-AU_R2_002A1 Panjit International Inc.

PJQ5540V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,730 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29.7A (Ta), 174A (Tc) 7V, 10V 2.1mOhm @ 20A, 10V 3.5V @ 50µA 63 nC @ 10 V ±20V 4690 pF @ 25 V - 3.3W (Ta), 115.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060X-8L
DMTH10H003SPSW-13 Diodes Incorporated

DMTH10H003SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,150 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5542 pF @ 50 V - 2.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type Q)
BUK766R0-60E,118 Nexperia USA Inc.

BUK766R0-60E,118

MOSFET N-CH 60V 75A D2PAK

Nexperia USA Inc.

1,534 -
Datasheet TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
CDMSJ22010-650 SL Central Semiconductor Corp

CDMSJ22010-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V 30V 726 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIJ4819DP-T1-GE3 Vishay Siliconix

SIJ4819DP-T1-GE3

P-CHANNEL 80-V (D-S) MOSFET POWE

Vishay Siliconix

5,996 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 11.5A (Ta), 44.4A (Tc) 4.5V, 10V 20.7mOhm @ 10A, 10V 2.6V @ 250µA 65 nC @ 10 V ±20V 3420 pF @ 40 V - 5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ5592-AU_R2_002A1 Panjit International Inc.

PJQ5592-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6010YNXC7G Rohm Semiconductor

R6010YNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

983 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 47W (Tc) 150°C (TJ) - - Through Hole TO-220FM
R6027YNX3C16 Rohm Semiconductor

R6027YNX3C16

NCH 600V 27A, TO-220AB, POWER MO

Rohm Semiconductor

980 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-220AB
TSM60NC196CI C0G Taiwan Semiconductor Corporation

TSM60NC196CI C0G

600V, 20A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,840 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
IRFSL5615PBF Infineon Technologies

IRFSL5615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies

964 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IQE220N15NM5CGATMA1 Infineon Technologies

IQE220N15NM5CGATMA1

TRENCH >=100V

Infineon Technologies

4,970 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18.3 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
IQE220N15NM5ATMA1 Infineon Technologies

IQE220N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

5,000 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 44A (Tc) 8V, 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage

XPJ1R004PB,LXHQ

40V; UMOS9; MOSFET 1MOHM; L-TOGL

Toshiba Semiconductor and Storage

2,975 -
Datasheet - 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1mOhm @ 80A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 223W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
XP10N3R8IT YAGEO XSEMI

XP10N3R8IT

FET N-CH 100V 67.7A TO220CFM

YAGEO XSEMI

1,000 -
Datasheet XP10N3R8 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 67.7A (Ta) 10V 3.88mOhm @ 35A, 10V 4V @ 250µA 131 nC @ 10 V ±20V 6560 pF @ 80 V - 1.92W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
SIHP14N60E-BE3 Vishay Siliconix

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

972 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
TPW2R508NH,L1Q Toshiba Semiconductor and Storage

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage

10,902 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
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FETs, MOSFETs FAQ

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