PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPB65R310CFDAATMA1 Infineon Technologies

IPB65R310CFDAATMA1

MOSFET N-CH 650V 11.4A D2PAK

Infineon Technologies

2,403 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1110 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
TSM60NE285CIT C0G Taiwan Semiconductor Corporation

TSM60NE285CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.5A (Tc) 10V, 12V 274mOhm @ 3.2A, 12V 6V @ 1.4mA 22 nC @ 10 V ±30V 894 pF @ 300 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
SIHG20N50E-GE3 Vishay Siliconix

SIHG20N50E-GE3

MOSFET N-CH 500V 19A TO247AC

Vishay Siliconix

485 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
PJD65N04S-AU_L2_002A1 Panjit International Inc.

PJD65N04S-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 167A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.3V @ 50µA 50 nC @ 10 V ±20V 3148 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
NVMJS0D9N04CLTWG onsemi

NVMJS0D9N04CLTWG

MOSFET N-CH 40V 50A/330A 8LFPAK

onsemi

2,987 -
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V 2V @ 190µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
DMT30M9LPS-13 Diodes Incorporated

DMT30M9LPS-13

MOSFET BVDSS: 25V-30V POWERDI506

Diodes Incorporated

2,490 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1mOhm @ 25A, 10V 3V @ 250µA 160.5 nC @ 10 V ±20V 12121 pF @ 20 V - 2.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (Type K)
NVMFWS0D7N04XMT1G onsemi

NVMFWS0D7N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

1,255 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 331A (Tc) 10V 0.7mOhm @ 50A, 10V 3.5V @ 180µA 74.5 nC @ 10 V ±20V 4657 pF @ 25 V - 134W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
CDMSJ22013.8-650 SL Central Semiconductor Corp

CDMSJ22013.8-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

493 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 4V @ 250µA 30 nC @ 10 V 30V 1040 pF @ 400 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
IPW65R420CFDFKSA2 Infineon Technologies

IPW65R420CFDFKSA2

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies

120 -
Datasheet CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
IXFP30N25X3M IXYS

IXFP30N25X3M

MOSFET N-CH 250V 30A TO220

IXYS

262 -
Datasheet HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
TSM60NC165CI C0G Taiwan Semiconductor Corporation

TSM60NC165CI C0G

600V, 24A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,989 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 44 nC @ 10 V ±30V 1857 pF @ 300 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
SUM40012EL-GE3 Vishay Siliconix

SUM40012EL-GE3

MOSFET N-CH 40V 150A TO263

Vishay Siliconix

2,434 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.67mOhm @ 30A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 10930 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
R6010YNX3C16 Rohm Semiconductor

R6010YNX3C16

600V 10A TO-220AB, HIGH-SPEED SW

Rohm Semiconductor

1,000 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 92W (Tc) 150°C (TJ) - - Through Hole TO-220AB
IPB60R210CFD7ATMA1 Infineon Technologies

IPB60R210CFD7ATMA1

MOSFET N-CH 600V 12A TO263-3

Infineon Technologies

990 -
Datasheet CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 250µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
TK9R7A15Q5,S4X Toshiba Semiconductor and Storage

TK9R7A15Q5,S4X

150V UMOS10-HSD TO-220SIS 9.7MOH

Toshiba Semiconductor and Storage

388 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 49A (Tc) 8V, 10V 9.7mOhm @ 24.5A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±20V 3690 pF @ 75 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
IQE022N06LM5SCATMA1 Infineon Technologies

IQE022N06LM5SCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

5,868 -
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
IQE022N06LM5CGSCATMA1 Infineon Technologies

IQE022N06LM5CGSCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

4,651 -
Datasheet OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9
PJQ5590-AU_R2_002A1 Panjit International Inc.

PJQ5590-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP034N08N5AKSA1 Infineon Technologies

IPP034N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

914 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
MCAC160N06Y-TP Micro Commercial Co

MCAC160N06Y-TP

MOSFET N-CH 60 160A DFN5060

Micro Commercial Co

5,000 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 6V, 10V 2.5mOhm @ 20A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 3586 pF @ 20 V - 150W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount DFN5060
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FETs, MOSFETs FAQ

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