PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MCAC160N06YHE3-TP Micro Commercial Co

MCAC160N06YHE3-TP

MOSFET N-CH 60 160A DFN5060

Micro Commercial Co

4,791 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 6V, 10V 2.5mOhm @ 20A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 3586 pF @ 20 V - 150W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
PJMF190N60E1_T0_00001 Panjit International Inc.

PJMF190N60E1_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.

1,826 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 9.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 1410 pF @ 400 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
IAUMN08S5N013GAUMA1 Infineon Technologies

IAUMN08S5N013GAUMA1

MOSFET_(75V 120V(

Infineon Technologies

1,965 -
Datasheet OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 250A (Tj) 6V, 10V 1.3mOhm @ 100A, 10V 3.8V @ 214µA 179 nC @ 10 V ±20V 12496 pF @ 40 V - 307W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
FCPF190N60E-F154 onsemi

FCPF190N60E-F154

MOSFET N-CH 600V 20.6A TO220F-3

onsemi

1,000 -
Datasheet SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tj) - 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
IPB65R190CFDATMA2 Infineon Technologies

IPB65R190CFDATMA2

MOSFET N-CH 650V 17.5A TO263-3

Infineon Technologies

893 -
Datasheet CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
SIDR570EP-T1-RE3 Vishay Siliconix

SIDR570EP-T1-RE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix

5,990 -
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 30.8A (Ta), 90.9A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
NVMFS5H600NLT1G onsemi

NVMFS5H600NLT1G

MOSFET N-CH 60V 35A/250A 5DFN

onsemi

1,500 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 250A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 250µA 89 nC @ 10 V ±20V 6680 pF @ 30 V - 3.3W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
IRF740LCPBF-BE3 Vishay Siliconix

IRF740LCPBF-BE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

975 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) - 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IQD009N06NM5CGATMA1 Infineon Technologies

IQD009N06NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,872 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
TK7R4A15Q5,S4X Toshiba Semiconductor and Storage

TK7R4A15Q5,S4X

150V UMOS10-HSD TO-220SIS 7.4MOH

Toshiba Semiconductor and Storage

400 -
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 57A (Tc) 8V, 10V 7.4mOhm @ 28.5A, 10V 4.5V @ 1.4mA 66 nC @ 10 V ±20V 4970 pF @ 75 V - 46W (Tc) 175°C - - Through Hole TO-220SIS
IPL60R180P6AUMA1 Infineon Technologies

IPL60R180P6AUMA1

MOSFET N-CH 600V 22.4A 4VSON

Infineon Technologies

4,990 -
Datasheet CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPB60R160P6ATMA1 Infineon Technologies

IPB60R160P6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies

2,219 -
Datasheet CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
TSM60NE200CIT C0G Taiwan Semiconductor Corporation

TSM60NE200CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V, 12V 185mOhm @ 4A, 12V 6V @ 1.65mA 30 nC @ 10 V ±30V 1238 pF @ 300 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
IAUA180N10S5N029AUMA1 Infineon Technologies

IAUA180N10S5N029AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,926 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tj) 6V, 10V 2.9mOhm @ 90A, 10V 3.8V @ 130µA 105 nC @ 10 V ±20V 7673 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
TK210V65Z,LQ Toshiba Semiconductor and Storage

TK210V65Z,LQ

MOSFET N-CH 650V 15A 5DFN

Toshiba Semiconductor and Storage

4,630 -
Datasheet DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 210mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
MCB2D8N04YHQ-TP Micro Commercial Co

MCB2D8N04YHQ-TP

POWER MOSFET

Micro Commercial Co

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 164A (Tc) 10V 2.8mOhm @ 20A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 3540 pF @ 25 V - 136W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
RD3R05BBHTL1 Rohm Semiconductor

RD3R05BBHTL1

NCH 150V 50A, TO-252, POWER MOSF

Rohm Semiconductor

2,370 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2150 pF @ 75 V - 89W (Tc) 150°C (TJ) - - Surface Mount TO-252
TK7R2E15Q5,S1X Toshiba Semiconductor and Storage

TK7R2E15Q5,S1X

150V UMOS10-HSD TO-220 7.2MOHM

Toshiba Semiconductor and Storage

400 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Ta), 84A (Tc) 8V, 10V 7.2mOhm @ 42A, 10V 4.5V @ 1.4mA 66 nC @ 10 V ±20V 4970 pF @ 75 V - 230W (Tc) 175°C - - Through Hole TO-220
IPT65R155CFD7XTMA1 Infineon Technologies

IPT65R155CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

2,000 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
NVMFWS003N10MCT1G onsemi

NVMFWS003N10MCT1G

PTNG 100V STD SO8FL HE

onsemi

1,420 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 23.7A (Ta), 169A (Tc) 10V 3.1mOhm @ 50A, 10V 4V @ 351µA 62 nC @ 10 V ±20V 4650 pF @ 50 V - 3.8W (Ta), 194W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
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FETs, MOSFETs FAQ

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