FETs, MOSFETs
Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.
For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS1M025120PN-CHANNEL SILICON CARBIDE POWER |
124 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 3600 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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ASZM040120TN-CHANNEL SILICON CARBIDE POWER |
30 | - |
|
Datasheet | - | TO-247-4 | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V, 20V | 32mOhm @ 40A, 20V | 3.6V @ 9.5mA | 87 nC @ 18 V | +25V, -10V | 2820 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AS1M080120PN-CHANNEL SILICON CARBIDE POWER |
78 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 79 nC @ 20 V | +25V, -10V | 1475 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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AS2M040120PN-CHANNEL SILICON CARBIDE POWER |
50 | - |
|
Datasheet | - | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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AS1M025120TN-CHANNEL SILICON CARBIDE POWER |
13 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 4200 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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AS1M040120TN-CHANNEL SILICON CARBIDE POWER |
1 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
FETs, MOSFETs FAQ
How can I narrow the current FETs, MOSFETs selection?
Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.
Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?
Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.
Can I request a quotation for a BOM or small-batch requirement?
Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.
What information should I provide when requesting a quote?
Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.
