FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFH16N50P3 MOSFET N-CH 500V 16A TO247AD Littelfuse Inc.	290	-	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	360mOhm @ 8A, 10V	5V @ 2.5mA	29 nC @ 10 V	±30V	1515 pF @ 25 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
TK16G60W,RVQ MOSFET N CH 600V 15.8A D2PAK Toshiba Semiconductor and Storage	984	-	RFQ	Datasheet	DTMOSIV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Surface Mount	D2PAK
STW35N65DM2 MOSFET N-CH 650V 32A TO247 STMicroelectronics	816	-	RFQ	Datasheet	MDmesh™ DM2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	110mOhm @ 16A, 10V	5V @ 250µA	56.3 nC @ 10 V	±25V	2540 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
NVHL095N65S3F SF3 FRFET AUTO 95MOHM TO-247 onsemi	418	-	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	95mOhm @ 18A, 10V	5V @ 860µA	66 nC @ 10 V	±30V	3020 pF @ 400 V	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
SIHB24N65E-GE3 MOSFET N-CH 650V 24A D2PAK Vishay Siliconix	1,868	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	145mOhm @ 12A, 10V	4V @ 250µA	122 nC @ 10 V	±30V	2740 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPTG018N10NM5ATMA1 TRENCH >=100V PG-HSOG-8 Infineon Technologies	1,700	-	RFQ	Datasheet	OptiMOS™	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Ta), 273A Tc)	6V, 10V	1.8mOhm @ 150A, 10V	3.8V @ 202µA	152 nC @ 10 V	±20V	11000 pF @ 50 V	-	3.8W (Ta), 273W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8-1
NVHL095N65S3HF SUPERFER3 FRFET AUTOMOTIVE 95MOH onsemi	450	-	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	95mOhm @ 18A, 10V	5V @ 860µA	66 nC @ 10 V	±30V	3105 pF @ 400 V	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IPB65R110CFDATMA2 MOSFET N-CH 650V 31.2A TO263-3 Infineon Technologies	1,960	-	RFQ	Datasheet	CoolMOS™ CFD2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	110mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118 nC @ 10 V	±20V	3240 pF @ 100 V	-	277.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3
SIHP085N60EF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	1,995	-	RFQ	Datasheet	EF	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	84mOhm @ 17A, 10V	5V @ 250µA	63 nC @ 10 V	±30V	2733 pF @ 100 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IMWH170R450M1XKSA1 IMWH170R450M1XKSA1 Infineon Technologies	252	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tray	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	10A (Tj)	12V, 15V	390mOhm @ 2A, 15V	5.7V @ 2.6mA	11.7 nC @ 12 V	15V, 12V	506 pF @ 1000 V	-	111W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-U04
SIHF30N60E-GE3 MOSFET N-CH 600V 29A TO220 Vishay Siliconix	2,975	-	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V	125mOhm @ 15A, 10V	4V @ 250µA	130 nC @ 10 V	±30V	2600 pF @ 100 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	-
MCBS260N10Y-TP N-CHANNEL MOSFET,TO-263-7 Micro Commercial Co	1,508	-	RFQ	Datasheet	-	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	260A (Tc)	10V	1.8mOhm @ 30A, 10V	4V @ 250µA	161 nC @ 10 V	±20V	10589 pF @ 25 V	-	375W (Tj)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
SIHG24N65E-GE3 MOSFET N-CH 650V 24A TO247AC Vishay Siliconix	610	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	145mOhm @ 12A, 10V	4V @ 250µA	122 nC @ 10 V	±30V	2740 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
CDF56G7032N TR13 PBFREE SURFACE MOUNT MOSFET Central Semiconductor Corp	2,500	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	700 V	18A (Tc)	6V	140mOhm @ 5A, 6V	2.5V @ 17.2mA	3.5 nC @ 6 V	+7V, -6V	125 pF @ 400 V	-	1.1W (Ta), 113W (Tc)	-55°C ~ 155°C (TJ)	-	-	Surface Mount, Wettable Flank	8-DFN (5x6)
TK095N65Z5,S1F(S 650V DTMOS6-HIGH SPEED DIODE Toshiba Semiconductor and Storage	195	-	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	29A (Ta)	10V	95mOhm @ 14.5A, 10V	4.5V @ 1.27mA	50 nC @ 10 V	±30V	2880 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
XP10NA1R5TL MOSFET N-CH 100V 300A TOLL YAGEO XSEMI	987	-	RFQ	Datasheet	XP10NA1R5	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	300A (Tc)	10V	1.5mOhm @ 100A, 10V	4V @ 250µA	304 nC @ 10 V	±20V	16960 pF @ 80 V	-	3.75W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL
MSC180SMA120SDT/R MOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology	773	-	RFQ	Datasheet	mSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	18V, 20V	225mOhm @ 8A, 20V	5V @ 500µA	36 nC @ 20 V	+23V, -10V	481 pF @ 1.2 kV	-	146W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
SIHF085N60EF-GE3 EF SERIES POWER MOSFET TO-220 FU Vishay Siliconix	1,000	-	RFQ	Datasheet	EF	TO-220-3 Full Pack	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	84mOhm @ 17A, 10V	5V @ 250µA	63 nC @ 10 V	±30V	2733 pF @ 100 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
IPW95R130PFD7XKSA1 HIGH POWER_NEW Infineon Technologies	314	-	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	36.5A	10V	-	-	141 nC @ 10 V	±20V	-	-	227W	-55°C ~ 150°C	-	-	Through Hole	PG-TO247-3-41
NTMTS002N08MC PTNG 80V IN CEBU PQFN88 onsemi	2,948	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	29A (Ta), 229A (Tc)	6V, 10V	2mOhm @ 90A, 10V	4V @ 540µA	125 nC @ 10 V	±20V	8900 pF @ 40 V	-	3.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFNW (8.3x8.4)

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.