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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SSM6K819R,LF Toshiba Semiconductor and Storage

SSM6K819R,LF

N-CH MOSFET, 100 V, 10 A, 0.0258

Toshiba Semiconductor and Storage

11,897 -
Datasheet - 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 25.8mOhm @ 4A, 10V 2.5V @ 100µA 8.5 nC @ 4.5 V ±20V 1110 pF @ 15 V - 1.5W (Ta) 175°C Automotive AEC-Q101 Surface Mount 6-TSOP-F
SSM6K818R,LF Toshiba Semiconductor and Storage

SSM6K818R,LF

N-CH MOSFET 30V, +/-20V, 15A ,0.

Toshiba Semiconductor and Storage

5,583 -
Datasheet - 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 12mOhm @ 4A, 4.5V 2.1V @ 100µA 7.5 nC @ 4.5 V ±20V 1130 pF @ 15 V - 1.5W (Ta) 150°C Automotive AEC-Q101 Surface Mount 6-TSOP-F
SSM6K804R,LF Toshiba Semiconductor and Storage

SSM6K804R,LF

N-CH MOSFET 40V, +/-20V, 12A ,0.

Toshiba Semiconductor and Storage

5,180 -
Datasheet - 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta) 4.5V, 10V 12mOhm @ 4A, 10V 2.4V @ 100µA 7.5 nC @ 4.5 V ±20V 1110 pF @ 20 V - 1.5W (Ta) 175°C - - Surface Mount 6-TSOP-F
TP89R103NL,LQ Toshiba Semiconductor and Storage

TP89R103NL,LQ

MOSFET N CH 30V 15A 8SOP

Toshiba Semiconductor and Storage

2,200 -
Datasheet U-MOSVIII-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 9.1mOhm @ 7.5A, 10V 2.3V @ 100µA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1W (Tc) 150°C (TJ) - - Surface Mount 8-SOP
TPH6R004PL,LQ Toshiba Semiconductor and Storage

TPH6R004PL,LQ

MOSFET N-CH 40V 87A/49A 8SOP

Toshiba Semiconductor and Storage

2,323 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 49A (Tc) 4.5V, 10V 6mOhm @ 24.5A, 10V 2.4V @ 200µA 30 nC @ 10 V ±20V 2700 pF @ 20 V - 81W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TPCC8105,L1Q Toshiba Semiconductor and Storage

TPCC8105,L1Q

PB-F POWER MOSFET TRANSISTOR TSO

Toshiba Semiconductor and Storage

3,023 -
Datasheet U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TK4P60D,RQ Toshiba Semiconductor and Storage

TK4P60D,RQ

PB-F POWER MOSFET TRANSISTOR DP(

Toshiba Semiconductor and Storage

920 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C - - Surface Mount DPAK
TPN6R303NC,LQ Toshiba Semiconductor and Storage

TPN6R303NC,LQ

MOSFET N CH 30V 20A 8TSON-ADV

Toshiba Semiconductor and Storage

2,980 -
Datasheet U-MOSVIII 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 6.3mOhm @ 10A, 10V 2.3V @ 200µA 24 nC @ 10 V ±20V 1370 pF @ 15 V - 700mW (Ta), 19W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
TPH8R808QM,LQ Toshiba Semiconductor and Storage

TPH8R808QM,LQ

80V UMOS9-H SOP-ADVANCE(N) 8.8MO

Toshiba Semiconductor and Storage

9,829 -
Datasheet U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 79A (Ta), 52A (Tc) 6V, 10V 8.8mOhm @ 26A, 10V 3.5V @ 300µA 26 nC @ 10 V ±20V 1750 pF @ 40 V - 3W (Ta), 109W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
TPN6R003NL,LQ Toshiba Semiconductor and Storage

TPN6R003NL,LQ

MOSFET N CH 30V 27A 8TSON-ADV

Toshiba Semiconductor and Storage

2,745 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6mOhm @ 13.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 32W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
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FETs, MOSFETs FAQ

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