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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK16V60W,LVQ Toshiba Semiconductor and Storage

TK16V60W,LVQ

MOSFET N-CH 600V 15.8A 4DFN

Toshiba Semiconductor and Storage

7,336 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 139W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
TK10V60W,LVQ Toshiba Semiconductor and Storage

TK10V60W,LVQ

MOSFET N-CH 600V 9.7A 4DFN

Toshiba Semiconductor and Storage

2,346 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 88.3W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
TK155U65Z,RQ Toshiba Semiconductor and Storage

TK155U65Z,RQ

DTMOS VI TOLL PD=150W F=1MHZ

Toshiba Semiconductor and Storage

4,768 -
Datasheet DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C - - Surface Mount TOLL
TK25A60X5,S5X Toshiba Semiconductor and Storage

TK25A60X5,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage

1 -
Datasheet DTMOSIV-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK20V60W,LVQ Toshiba Semiconductor and Storage

TK20V60W,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage

4,482 -
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 170mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 156W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
TW070J120B,S1Q Toshiba Semiconductor and Storage

TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

Toshiba Semiconductor and Storage

4,273 -
Datasheet - TO-3P-3, SC-65-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 90mOhm @ 18A, 20V 5.8V @ 20mA 67 nC @ 20 V ±25V, -10V 1680 pF @ 800 V - 272W (Tc) -55°C ~ 175°C - - Through Hole TO-3P(N)
TPCA8007-H(TE12L,Q Toshiba Semiconductor and Storage

TPCA8007-H(TE12L,Q

MOSFET N-CH 100V 20A 8-SOPA

Toshiba Semiconductor and Storage

3,037 -
Datasheet * - Cut Tape (CT) Obsolete - - - - - - - - - - - - - - - - -
TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage

TPCA8009-H(TE12L,Q

MOSFET N-CH 150V 7A 8SOP

Toshiba Semiconductor and Storage

8,110 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta) 10V 350mOhm @ 3.5A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
2SK2963(TE12L,F) Toshiba Semiconductor and Storage

2SK2963(TE12L,F)

MOSFET N-CH 100V 1A PW-MINI

Toshiba Semiconductor and Storage

5,983 -
Datasheet - TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 4V, 10V 700mOhm @ 500mA, 10V 2V @ 1mA 6.3 nC @ 10 V ±20V 140 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount PW-MINI
TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage

TPCF8B01(TE85L,F,M

MOSFET P-CH 20V 2.7A VS-8

Toshiba Semiconductor and Storage

5,864 -
Datasheet U-MOSIII 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.8V, 4.5V 110mOhm @ 1.4A, 4.5V 1.2V @ 200µA 6 nC @ 5 V ±8V 470 pF @ 10 V Schottky Diode (Isolated) 330mW (Ta) 150°C (TJ) - - Surface Mount VS-8 (2.9x1.5)
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FETs, MOSFETs FAQ

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