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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK190E65Z,S1X Toshiba Semiconductor and Storage

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage

113 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-220
TK190U65Z,RQ Toshiba Semiconductor and Storage

TK190U65Z,RQ

DTMOS VI TOLL PD=130W F=1MHZ

Toshiba Semiconductor and Storage

1,022 -
Datasheet DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Surface Mount TOLL
TK200F04N1L,LXGQ Toshiba Semiconductor and Storage

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

1,016 -
Datasheet U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK160F10N1L,LXGQ Toshiba Semiconductor and Storage

TK160F10N1L,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

5,719 -
Datasheet U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 2.4mOhm @ 80A, 10V 3.5V @ 1mA 122 nC @ 10 V ±20V 10100 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
XK1R9F10QB,LXGQ Toshiba Semiconductor and Storage

XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

4,329 -
Datasheet U-MOSX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 1.92mOhm @ 80A, 10V 3.5V @ 1mA 184 nC @ 10 V ±20V 11500 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK22A65X5,S5X Toshiba Semiconductor and Storage

TK22A65X5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

150 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 160mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK110U65Z,RQ Toshiba Semiconductor and Storage

TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

Toshiba Semiconductor and Storage

5,960 -
Datasheet DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Surface Mount TOLL
TKR74F04PB,LXGQ Toshiba Semiconductor and Storage

TKR74F04PB,LXGQ

MOSFET N-CH 40V 250A TO220SM

Toshiba Semiconductor and Storage

4,284 -
Datasheet U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 250A (Ta) 6V, 10V 0.74mOhm @ 125A, 10V 3V @ 1mA 227 nC @ 10 V ±20V 14200 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK125V65Z,LQ Toshiba Semiconductor and Storage

TK125V65Z,LQ

MOSFET N-CH 650V 24A 5DFN

Toshiba Semiconductor and Storage

10,000 -
Datasheet DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 125mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK099V65Z,LQ Toshiba Semiconductor and Storage

TK099V65Z,LQ

MOSFET N-CH 650V 30A 5DFN

Toshiba Semiconductor and Storage

12,407 -
Datasheet DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 99mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Surface Mount 5-DFN (8x8)
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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