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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage

TK40P03M1(T6RDS-Q)

MOSFET N-CH 30V 40A DPAK

Toshiba Semiconductor and Storage

7,945 -
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - - - Surface Mount DPAK
TK40S10K3Z(T6L1,NQ Toshiba Semiconductor and Storage

TK40S10K3Z(T6L1,NQ

MOSFET N-CH 100V 40A DPAK

Toshiba Semiconductor and Storage

9,847 -
Datasheet U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Ta) 10V 18mOhm @ 20A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 3110 pF @ 10 V - 93W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK45P03M1,RQ(S Toshiba Semiconductor and Storage

TK45P03M1,RQ(S

MOSFET N-CH 30V 45A DPAK

Toshiba Semiconductor and Storage

7,402 -
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 9.7mOhm @ 22.5A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 1500 pF @ 10 V - - - - - Surface Mount DPAK
TK4A53D(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A53D(STA4,Q,M)

MOSFET N-CH 525V 4A TO220SIS

Toshiba Semiconductor and Storage

5,468 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A55D(STA4,Q,M)

MOSFET N-CH 550V 4A TO220SIS

Toshiba Semiconductor and Storage

3,133 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage

5,265 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A65DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A65DA(STA4,Q,M)

MOSFET N-CH 650V 3.5A TO220SIS

Toshiba Semiconductor and Storage

6,924 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3.5A (Ta) 10V 1.9Ohm @ 1.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage

TK4P50D(T6RSS-Q)

MOSFET N-CH 500V 4A DPAK

Toshiba Semiconductor and Storage

8,825 -
Datasheet π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55DA(T6RSS-Q) Toshiba Semiconductor and Storage

TK4P55DA(T6RSS-Q)

MOSFET N-CH 550V 3.5A DPAK

Toshiba Semiconductor and Storage

5,355 -
Datasheet π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55D(T6RSS-Q) Toshiba Semiconductor and Storage

TK4P55D(T6RSS-Q)

MOSFET N-CH 550V 4A DPAK

Toshiba Semiconductor and Storage

6,302 -
Datasheet π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
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FETs, MOSFETs FAQ

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