REFINED COMPONENT RESULTS

FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCC8104,L1Q(CM Toshiba Semiconductor and Storage

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514 -
Datasheet U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8136.LQ Toshiba Semiconductor and Storage

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK40J20D,S1F(O Toshiba Semiconductor and Storage

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C - - Through Hole TO-3P(N)
TPCC8104,L1Q Toshiba Semiconductor and Storage

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK12J60W,S1VE(S Toshiba Semiconductor and Storage

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage

6,276 -
Datasheet - TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-3P(N)
TPCA8128,L1Q Toshiba Semiconductor and Storage

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

6,835 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
TK430A60F,S4X(S Toshiba Semiconductor and Storage

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

6,663 -
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK370A60F,S4X(S Toshiba Semiconductor and Storage

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

4,152 -
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
SSM3K15CT,L3F Toshiba Semiconductor and Storage

SSM3K15CT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

2,779 -
Datasheet - SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount CST3
Total 814 Record«Prev1... 777879808182Next»

FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

Please provide the target part number, manufacturer, quantity and any required date code, package or delivery requirements so our team can respond more accurately.

PART SELECTION SUPPORT

Need Help Finding the Right FETs, MOSFETs?

Send your target specifications, preferred brand, reference part number and quantity. Our team can help review matching options, stock availability and quotation details.

Egoo Store Egoo Store BOM BOM Cart My Inquiry Account My Account