PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NTH4L095N065SC1 onsemi

NTH4L095N065SC1

SIC MOS TO247-4L 650V

onsemi

420 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 31A (Tc) 15V, 18V 105mOhm @ 12A, 18V 4.3V @ 4mA 50 nC @ 10 V +22V, -8V 956 pF @ 325 V - 129W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
NTH4L070N120M3S onsemi

NTH4L070N120M3S

SILICON CARBIDE (SIC) MOSFET EL

onsemi

175 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 34A (Tc) 18V 87mOhm @ 15A, 18V 4.4V @ 7mA 57 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
IPT017N10NM5LF2ATMA1 Infineon Technologies

IPT017N10NM5LF2ATMA1

IPT017N10NM5LF2ATMA1

Infineon Technologies

2,000 -
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 321A (Tc) 10V, 15V 1.6mOhm @ 150A, 15V 3.9V @ 280µA 206 nC @ 10 V ±20V 17000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
NTMFS5C604NLT3G onsemi

NTMFS5C604NLT3G

MOSFET N-CH 60V 40A/287A 5DFN

onsemi

4,853 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 120 nC @ 10 V ±20V 8900 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NVMTS1D1N04CTXG onsemi

NVMTS1D1N04CTXG

T6 40V SL AIZU SINGLE NCH PQFN 8

onsemi

2,909 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 48.8A (Ta), 277A (Tc) 10V 1.1mOhm @ 50A, 10V 4V @ 210µA 86 nC @ 10 V ±20V 5410 pF @ 25 V - 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
IMT65R083M1HXUMA1 Infineon Technologies

IMT65R083M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,726 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
SIHP050N60E-GE3 Vishay Siliconix

SIHP050N60E-GE3

MOSFET N-CH 600V 51A TO220AB

Vishay Siliconix

926 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPDQ60R037CM8XTMA1 Infineon Technologies

IPDQ60R037CM8XTMA1

IPDQ60R037CM8XTMA1

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 65A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3459 pF @ 400 V - 338W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IMDQ75R060M1HXUMA1 Infineon Technologies

IMDQ75R060M1HXUMA1

IMDQ75R060M1HXUMA1

Infineon Technologies

705 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +20V, -2V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
NTBLS1D5N10MCTXG onsemi

NTBLS1D5N10MCTXG

MOSFET - POWER, SINGLE, N-CHANNE

onsemi

1,415 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 312A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 799µA 131 nC @ 10 V ±20V 10100 pF @ 50 V - 3.4W (Ta), 322W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
IPDQ60T040S7AXTMA1 Infineon Technologies

IPDQ60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
TSM60NE084CIT C0G Taiwan Semiconductor Corporation

TSM60NE084CIT C0G

600V, 21A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V, 12V 82mOhm @ 7A, 12V 6V @ 2.9mA 69 nC @ 10 V ±30V 2930 pF @ 300 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
IMLT65R050M2HXTMA1 Infineon Technologies

IMLT65R050M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

315 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPB029N15NM6ATMA1 Infineon Technologies

IPB029N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,830 -
Datasheet OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 24A (Ta), 165A (Tc) 8V, 15V 2.8mOhm @ 100A, 15V 4V @ 276µA 137 nC @ 10 V ±20V 9900 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
NTBL060N065SC1 onsemi

NTBL060N065SC1

M2 650V SIC MOSFET 60MOHM WITH T

onsemi

1,998 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
PSMN1R8-80SSFJ Nexperia USA Inc.

PSMN1R8-80SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,771 -
Datasheet - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 270A (Tc) 7V, 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 222 nC @ 10 V ±20V 15319 pF @ 40 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
PSMN2R0-100SSFJ Nexperia USA Inc.

PSMN2R0-100SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,754 -
Datasheet - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 267A (Tc) 7V, 10V 2.07mOhm @ 25A, 10V 4V @ 1mA 242 nC @ 10 V ±20V 16140 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
SIHH085N60EF-T1GE3 Vishay Siliconix

SIHH085N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

5,665 -
Datasheet EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 85mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHK085N60EF-T1GE3 Vishay Siliconix

SIHK085N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2,000 -
Datasheet EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 85mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
GS-065-014-6-L-MR Infineon Technologies Canada Inc.

GS-065-014-6-L-MR

GS-065-014-6-L-MR

Infineon Technologies Canada Inc.

241 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
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FETs, MOSFETs FAQ

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