PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G06P01E Goford Semiconductor

G06P01E

P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4

Goford Semiconductor

8,792 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4A (Tc) 1.8V, 4.5V 28mOhm @ 3A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±10V 1087 pF @ 6 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
3401 Goford Semiconductor

3401

MOSFET P-CH 30V 4.2A SOT-23

Goford Semiconductor

8,625 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Tc) 4.5V, 10V 55mOhm @ 4A, 10V 1.3V @ 250µA 8.5 nC @ 4.5 V ±12V 670 pF @ 15 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
ISL9N306AD3ST Fairchild Semiconductor

ISL9N306AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,371 -
Datasheet UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount TO-252 (DPAK)
SFW9510TM Fairchild Semiconductor

SFW9510TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

6,259 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.6A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 335 pF @ 25 V - 3.8W (Ta), 32W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
SSF6092G1 Good-Ark Semiconductor

SSF6092G1

MOSFET, N-CH, SINGLE, 2.7A, 60V,

Good-Ark Semiconductor

6,000 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A 10V 92mOhm @ 2.7A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 641 pF @ 25 V - 1.25W -55°C ~ 150°C - - Surface Mount SOT-23
GSFR0308 Good-Ark Semiconductor

GSFR0308

MOSFET, N-CH, SINGLE, 7A, 30V, S

Good-Ark Semiconductor

5,973 -
Datasheet - SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 4A, 10V 2V @ 250µA 6.4 nC @ 10 V ±20V 460 pF @ 15 V - 2W (Ta) -50°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G3035 Goford Semiconductor

G3035

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Goford Semiconductor

5,959 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Tc) 4.5V, 10V 55mOhm @ 4A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 607 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
HS54095-01-E Renesas Electronics Corporation

HS54095-01-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,500 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
SSF3051G7 Good-Ark Semiconductor

SSF3051G7

MOSFET, P-CH, SINGLE, -4A, -30V,

Good-Ark Semiconductor

5,198 -
Datasheet - SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A 4.5V, 10V 48mOhm @ 4.4A, 10V 3V @ 250µA 7.1 nC @ 5 V ±25V 520 pF @ 15 V - 1.7W -55°C ~ 150°C - - Surface Mount SOT-23-6L
FSS248-TL-E onsemi

FSS248-TL-E

MOSFET N-CH

onsemi

5,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FQPF5P10 Fairchild Semiconductor

FQPF5P10

MOSFET P-CH 100V 2.9A TO220F

Fairchild Semiconductor

4,443 -
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 2.9A (Tc) 10V 1.05Ohm @ 1.45A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
FQP630 Fairchild Semiconductor

FQP630

MOSFET N-CH 200V 9A TO220-3

Fairchild Semiconductor

4,361 -
Datasheet QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
2SK681A-AZ Renesas Electronics Corporation

2SK681A-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

4,181 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FQPF5N20L Fairchild Semiconductor

FQPF5N20L

MOSFET N-CH 200V 3.5A TO220F

Fairchild Semiconductor

3,834 -
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 5V, 10V 1.2Ohm @ 1.75A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
RJK03M6DNS-WS#J5 Renesas Electronics Corporation

RJK03M6DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,610 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
03N06 Goford Semiconductor

03N06

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Goford Semiconductor

3,332 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 10 V ±20V 458 pF @ 30 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
FDN340P-EV EVVO

FDN340P-EV

MOSFET P-CH 20V 2A SOT-23

EVVO

3,000 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 8 nC @ 4.5 V ±8V 600 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount SOT-23
FDN339AN UMW

FDN339AN

MOSFET N-CH 20V 3A SOT23

UMW

2,995 -
Datasheet * - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
SI2333CDS UMW

SI2333CDS

MOSFET P-CH 12V 7.1A SOT23

UMW

2,994 -
Datasheet * TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 12 V 7.1A (Tc) 1.8V, 4.5V 35mOhm @ 5.1A, 4.5V 1V @ 250µA - ±8V - - 1.25W (Ta), 2.5W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
FDV304P UMW

FDV304P

MOSFET P-CH 25V 460MA SOT23

UMW

2,987 -
Datasheet * - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs FAQ

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