PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GSFD2506 Good-Ark Semiconductor

GSFD2506

MOSFET, N-CH, SINGLE, 6.00A, 250

Good-Ark Semiconductor

4,972 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 4.5V, 10V 620mOhm @ 2A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 777 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF5N50CYDTU onsemi

FQPF5N50CYDTU

MOSFET N-CH 500V 5A TO220F-3

onsemi

9,269 -
Datasheet QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
2SJ317NYTR Renesas Electronics Corporation

2SJ317NYTR

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

4,000 -
Datasheet * - Bulk Obsolete - - - - - - - - - - - - - - - - -
RFD14N06 Harris Corporation

RFD14N06

N-CHANNEL POWER MOSFET

Harris Corporation

3,664 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRLL024NTR-IR International Rectifier

AUIRLL024NTR-IR

AUTOMOTIVE POWER MOSFET

International Rectifier

3,529 -
Datasheet HEXFET® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IPP45P03P4L11AKSA1 Infineon Technologies

IPP45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO220-3

Infineon Technologies

9,618 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRF7241TR UMW

IRF7241TR

MOSFET P-CH 40V 6.2A 8SOIC

UMW

3,000 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDD5810 UMW

FDD5810

MOSFET N-CH 60V 7.4A/37A DPAK

UMW

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V 2V @ 50µA 34 nC @ 10 V ±20V 1890 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IPD50N06S2-14 UMW

IPD50N06S2-14

MOSFET N-CH 60V 50A DPAK

UMW

2,500 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDD8874 UMW

FDD8874

MOSFET N-CH 30V 116A DPAK

UMW

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
HUF76609D3 UMW

HUF76609D3

MOSFET N-CH 100V 10A DPAK

UMW

2,500 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
G2N65K Goford Semiconductor

G2N65K

MOSFET N-CH 650V 2A 35W TO-252

Goford Semiconductor

2,455 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 3.2V @ 250µA 8 nC @ 10 V ±20V 250 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
RM40P40LD Rectron USA

RM40P40LD

MOSFET P-CHANNEL 40V 40A TO252-2

Rectron USA

2,432 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 10V 14mOhm @ 12A, 10V 3V @ 250µA - ±20V 2960 pF @ 20 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-2
100N03A UMW

100N03A

TO-252 MOSFETS ROHS

UMW

2,335 -
Datasheet UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HUFA76439P3 Fairchild Semiconductor

HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

1,551 -
Datasheet UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
HUF75333S3 Harris Corporation

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation

1,257 -
Datasheet UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
HUF75333S3 Fairchild Semiconductor

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

Fairchild Semiconductor

1,160 -
Datasheet UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
IRF3709PBF Infineon Technologies

IRF3709PBF

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies

2,281 -
Datasheet HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD9113 Harris Corporation

IRFD9113

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Harris Corporation

1,090 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-DIP, Hexdip, HVMDIP
IPP042N03LGXKSA1 Infineon Technologies

IPP042N03LGXKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies

4,551 -
Datasheet OptiMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
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FETs, MOSFETs FAQ

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