PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RQ3E130MNTB1 Rohm Semiconductor

RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

Rohm Semiconductor

1,969 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8.1mOhm @ 13A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 840 pF @ 15 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
2SK3434-Z-AZ Renesas Electronics Corporation

2SK3434-Z-AZ

MOSFET N-CH

Renesas Electronics Corporation

1,516 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
GT110N06M Goford Semiconductor

GT110N06M

MOSFET N-CH 60V 45A 52W TO-263

Goford Semiconductor

784 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.4V @ 250µA 31 nC @ 10 V ±20V 1200 pF @ 30 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IRF6616TRPBF International Rectifier

IRF6616TRPBF

IRF6616 - MOSFET, 40V, 106A, 5.0

International Rectifier

774 -
Datasheet HEXFET® DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
G230P06M Goford Semiconductor

G230P06M

MOSFET P-CH 60V 48A 105W TO-263

Goford Semiconductor

745 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 20mOhm @ 10A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4505 pF @ 30 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
RJK0380DPA-00#J53 Renesas Electronics Corporation

RJK0380DPA-00#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

69,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
2SJ634-E onsemi

2SJ634-E

MOSFET P-CH 60V 8A

onsemi

24,500 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
HAT2085T-EL-E Renesas Electronics Corporation

HAT2085T-EL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

21,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDP8860 Fairchild Semiconductor

FDP8860

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

15,367 -
Datasheet PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.5mOhm @ 80A, 10V 2.5V @ 250µA 222 nC @ 10 V ±20V 12240 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RJK0380DPA-02#J0 Renesas Electronics Corporation

RJK0380DPA-02#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

15,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDMS86101E onsemi

FDMS86101E

MOSFET N-CH 100V 12.4A/60A 8PQFN

onsemi

3,000 -
Datasheet PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 60A (Tc) 6V, 10V 8mOhm @ 13A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRL2505PBF Infineon Technologies

IRL2505PBF

MOSFET N-CH 55V 104A TO220AB

Infineon Technologies

6,149 -
Datasheet HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
GSFD8005 Good-Ark Semiconductor

GSFD8005

MOSFET, N-CH, SINGLE, 5.5A, 800V

Good-Ark Semiconductor

4,980 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 2.7Ohm @ 2.5A, 10V 4V @ 250µA 15.16 nC @ 10 V ±30V 678 pF @ 25 V - 132W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
AUIRF1010EZ International Rectifier

AUIRF1010EZ

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

3,340 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) - 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V - 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
HUF76437P3 Fairchild Semiconductor

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,200 -
Datasheet UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPI100N06S3L-03 Infineon Technologies

IPI100N06S3L-03

MOSFET N-CH 55V 100A TO262-3

Infineon Technologies

5,634 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 3mOhm @ 80A, 10V 2.2V @ 230µA 550 nC @ 10 V ±16V 26240 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
HUFA75339P3 Fairchild Semiconductor

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor

2,440 -
Datasheet UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
BUK9E04-30B,127 NXP USA Inc.

BUK9E04-30B,127

MOSFET N-CH 30V 75A I2PAK

NXP USA Inc.

7,725 -
Datasheet TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 3mOhm @ 25A, 10V 2V @ 1mA 56 nC @ 5 V ±15V 6526 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
RJK0380DPA-WS#J53 Renesas Electronics Corporation

RJK0380DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

320 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
NVF3055-100T1G onsemi

NVF3055-100T1G

MOSFET N-CH 60V 3A SOT223

onsemi

3,724 -
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 10V 110mOhm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 455 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223 (TO-261)
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FETs, MOSFETs FAQ

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