PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RJJ0621DPP-0P#T2 Renesas Electronics Corporation

RJJ0621DPP-0P#T2

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

18,428 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
SI4436DY-T1-E3 Vishay Siliconix

SI4436DY-T1-E3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix

11,843 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
2SK4087LS-1E onsemi

2SK4087LS-1E

MOSFET N-CH 600V 9.2A TO220F-3FS

onsemi

6,468 -
Datasheet - TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 610mOhm @ 7A, 10V - 46 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220F-3FS
NTMFS4962NFT1G onsemi

NTMFS4962NFT1G

MOSFET N-CH 30V SO8FL

onsemi

6,000 -
Datasheet * - Bulk Obsolete - - - - - - - - - - - - - - - - -
G050P03S Goford Semiconductor

G050P03S

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

Goford Semiconductor

3,994 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 5.5mOhm @ 10A, 10V 2.5V @ 250µA 111 nC @ 10 V ±20V 7221 pF @ 15 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
BUK754R3-75C,127 NXP USA Inc.

BUK754R3-75C,127

MOSFET N-CH 75V 100A TO220AB

NXP USA Inc.

9,719 -
Datasheet TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK654R0-75C,127 NXP USA Inc.

BUK654R0-75C,127

MOSFET N-CH 75V 120A TO220AB

NXP USA Inc.

3,194 -
Datasheet TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2.8V @ 1mA 234 nC @ 10 V ±16V 15450 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FDA16N50LDTU onsemi

FDA16N50LDTU

MOSFET N-CH 500V 16.5A TO3PN

onsemi

8,811 -
Datasheet - TO-3P-3, SC-65-3, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN (L-Forming)
SI9435BDY-T1-GE3 Vishay Siliconix

SI9435BDY-T1-GE3

MOSFET P-CH 30V 4.1A 8SO

Vishay Siliconix

2,371 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 10V 42mOhm @ 5.7A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
RM12N650T2 Rectron USA

RM12N650T2

MOSFET N-CH 650V 11.5A TO220-3

Rectron USA

2,000 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 360mOhm @ 7A, 10V 4V @ 250µA - ±30V 870 pF @ 50 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
GSFH60R570 Good-Ark Semiconductor

GSFH60R570

MOSFET, N-CH, SINGLE, 7.00A, 600

Good-Ark Semiconductor

1,996 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 570mOhm @ 3.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 602 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AUIRFB4410-IR International Rectifier

AUIRFB4410-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

1,152 -
Datasheet HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 1.037mA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-904
2SK3481(0)-Z-E1-AZ Renesas Electronics Corporation

2SK3481(0)-Z-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FQP12N60C onsemi

FQP12N60C

MOSFET N-CH 600V 12A TO220-3

onsemi

8,475 -
Datasheet QFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AUIRFS8403TRR International Rectifier

AUIRFS8403TRR

MOSFET N-CH 40V 123A D2PAK

International Rectifier

800 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) - 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
G130N06M Goford Semiconductor

G130N06M

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

Goford Semiconductor

780 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.4V @ 250µA 36.6 nC @ 10 V ±20V 2867 pF @ 30 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
IPP06CN10LG Infineon Technologies

IPP06CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies

490 -
Datasheet OptiMOS™ 2 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 6.2mOhm @ 100A, 10V 2.4V @ 180µA 124 nC @ 10 V ±20V 11900 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
FQA27N25 onsemi

FQA27N25

MOSFET N-CH 250V 27A TO3PN

onsemi

5,942 -
Datasheet QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 27A (Tc) 10V 110mOhm @ 13.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 210W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
RJK03R1DPA-00#J5A Renesas Electronics Corporation

RJK03R1DPA-00#J5A

N-CHANNEL MOSFET

Renesas Electronics Corporation

924,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDB6035AL Fairchild Semiconductor

FDB6035AL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

172,284 -
Datasheet PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta) 4.5V, 10V 12mOhm @ 24A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1250 pF @ 15 V - 52W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263AB
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FETs, MOSFETs FAQ

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