PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT1K2P15S Goford Semiconductor

GT1K2P15S

MOSFET P-CH 150V 5A 3W 150M(MAX)

Goford Semiconductor

4,000 -
Datasheet Trench - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V, 4.5V 150mOhm @ 5A, 10V 3V @ 250µA 86 nC @ 10 V 20V 3275 pF @ 75 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
IRFD123PBF Vishay Siliconix

IRFD123PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix

3,184 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 10V 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
FDMS8020 onsemi

FDMS8020

MOSFET N-CH 30V 26A/42A 8PQFN

onsemi

3,000 -
Datasheet PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.5mOhm @ 26A, 10V 3V @ 250µA 61 nC @ 10 V ±20V 3800 pF @ 15 V - 2.5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRFU214PBF Vishay Siliconix

IRFU214PBF

MOSFET N-CH 250V 2.2A TO251AA

Vishay Siliconix

2,855 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
AUIRL1404S Infineon Technologies

AUIRL1404S

MOSFET N-CH 40V 160A DPAK

Infineon Technologies

7,383 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
AUIRL1404S International Rectifier

AUIRL1404S

PFET, 160A I(D), 40V, 0.004OHM,

International Rectifier

2,225 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
FDMS1D5N03 onsemi

FDMS1D5N03

MOSFET N-CH 30V 218A 8PQFN

onsemi

4,621 -
Datasheet PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 218A (Tc) 4.5V, 10V 1.15mOhm @ 40A, 10V 2V @ 250µA 63 nC @ 4.5 V ±16V 9690 pF @ 15 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
GSFT1060 Good-Ark Semiconductor

GSFT1060

MOSFET, N-CH, SINGLE, 60A, 100V,

Good-Ark Semiconductor

1,600 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 18mOhm @ 25A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3300 pF @ 50 V - 113W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
NTMFS4C800NT1G onsemi

NTMFS4C800NT1G

MOSFET N-CH 30V 69A SO8FL

onsemi

1,500 -
Datasheet - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDP8D5N10C UMW

FDP8D5N10C

MOSFET N-CH 100V 76A TO220

UMW

1,000 -
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
G75P04K Goford Semiconductor

G75P04K

P40V,RD(MAX)<10M@-10V,VTH-1.2V~-

Goford Semiconductor

910 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 10A, 20V 2.5V @ 250µA 106 nC @ 10 V ±20V 7039 pF @ 20 V - 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
IPD80P03P4L07ATMA1 Infineon Technologies

IPD80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO252-3

Infineon Technologies

764 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.8mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
HUF76137S3S Harris Corporation

HUF76137S3S

N-CHANNEL POWER MOSFET

Harris Corporation

197 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 72 nC @ 10 V ±16V 2100 pF @ 25 V - 145W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
TK7R0E08QM,S1X Toshiba Semiconductor and Storage

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage

108 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C - - Through Hole TO-220
NTMFS4985NFT1G onsemi

NTMFS4985NFT1G

MOSFET N-CH 30V 17.5A/65A 5DFN

onsemi

1,228 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.5A (Ta), 65A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.3V @ 1mA 30.5 nC @ 10 V ±20V 2100 pF @ 15 V - 1.63W (Ta), 22.73W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
RCD100N19TL Rohm Semiconductor

RCD100N19TL

MOSFET N-CH 190V 10A CPT3

Rohm Semiconductor

1,108 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 190 V 10A (Tc) 4V, 10V 182mOhm @ 5A, 10V 2.5V @ 1mA 52 nC @ 10 V ±20V 2000 pF @ 25 V - 850mW (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount CPT3
MTAJ50N05HDLFK onsemi

MTAJ50N05HDLFK

NFET T0220FP JPN

onsemi

935 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IRFD320 Harris Corporation

IRFD320

MOSFET N-CH 400V 490MA 4HVMDIP

Harris Corporation

812 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) - 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
2SJ387L-E Renesas Electronics Corporation

2SJ387L-E

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

446 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IRF9640S2497 Harris Corporation

IRF9640S2497

11A, 200V, 0.500 OHM, P-CHANNEL

Harris Corporation

250 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs FAQ

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