PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RJK60S5DPK-M0#T0 Renesas Electronics Corporation

RJK60S5DPK-M0#T0

MOSFET N-CH 600V 20A TO3PSG

Renesas Electronics Corporation

68,097 -
Datasheet - TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - - - - - Through Hole TO-3PSG
RJK60S5DPE-00#J3 Renesas Electronics Corporation

RJK60S5DPE-00#J3

MOSFET N-CH 600V 20A 4LDPAK

Renesas Electronics Corporation

40,000 -
Datasheet - SC-83 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - 125W (Tc) 150°C (TJ) - - Surface Mount LDPAK
RJK60S5DPP-E0#T2 Renesas Electronics Corporation

RJK60S5DPP-E0#T2

MOSFET N-CH 600V 20A TO220FP

Renesas Electronics Corporation

226 -
Datasheet - TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V - 33.7W (Tc) 150°C (TJ) - - Through Hole TO-220FP
C3M0040120J2-TR Wolfspeed, Inc.

C3M0040120J2-TR

WOLFSPEED SIC, MOSFET

Wolfspeed, Inc.

589 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active - - - - - - - - - - - - - - - Surface Mount TO-263-7
CGD65A055S2-T07 Cambridge GaN Devices

CGD65A055S2-T07

650V GAN HEMT, 55MOHM, DFN8X8. W

Cambridge GaN Devices

674 -
Datasheet ICeGaN™ 16-PowerVDFN Cut Tape (CT) Active - GaNFET (Gallium Nitride) 650 V 27A (Tc) 12V 77mOhm @ 2.2A, 12V 4.2V @ 10mA 6 nC @ 12 V +20V, -1V - Current Sensing - -55°C ~ 150°C (TJ) - - Surface Mount 16-DFN (8x8)
SCT3080KRC14 Rohm Semiconductor

SCT3080KRC14

SICFET N-CH 1200V 31A TO247-4L

Rohm Semiconductor

270 -
Datasheet - TO-247-4 Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
N3T035MP120D NoMIS Power

N3T035MP120D

1200 V, 76A SIC MOSFET, TO-247

NoMIS Power

652 -
Datasheet 1200 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 76A 20V 45mOhm @ 30A, 20V 3V @ 15mA 126 nC @ 20 V +20V, -5V 2204 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
4AM17-91 Renesas Electronics Corporation

4AM17-91

POWER N AND P CHANNEL MOSFETS

Renesas Electronics Corporation

38,812 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
H5N2513PL-E Renesas Electronics Corporation

H5N2513PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,189 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
G3R40MT12J GeneSiC Semiconductor

G3R40MT12J

SIC MOSFET N-CH 75A TO263-7

GeneSiC Semiconductor

421 -
Datasheet G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 15V 48mOhm @ 35A, 15V 2.7V @ 18mA (Typ) 106 nC @ 15 V ±15V 2929 pF @ 800 V - 374W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
FCH085N80-F155 onsemi

FCH085N80-F155

MOSFET N-CH 800V 46A TO247

onsemi

437 -
Datasheet SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 46A (Tc) 10V 85mOhm @ 23A, 10V 4.5V @ 4.6mA 255 nC @ 10 V ±20V 10825 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NVBGS4D1N15MC onsemi

NVBGS4D1N15MC

MOSFET N-CH 150V 20A/185A D2PAK

onsemi

364 -
Datasheet - TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 20A (Ta), 185A (Tc) 8V, 10V 4.1mOhm @ 104A, 10V 4.5V @ 574µA 88.9 nC @ 10 V ±20V 7285 pF @ 75 V - 3.7W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
S3M0025120T SMC Diode Solutions

S3M0025120T

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

200 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 77A (Tc) 18V 32mOhm @ 48A, 18V 4V @ 20mA 175 nC @ 18 V +22V, -8V 3519 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
H5N5011PL-E Renesas Electronics Corporation

H5N5011PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,086 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
G2R1000MT33J GeneSiC Semiconductor

G2R1000MT33J

SIC MOSFET N-CH 4A TO263-7

GeneSiC Semiconductor

1,853 -
Datasheet G2R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 3.5V @ 2mA 21 nC @ 20 V +20V, -5V 238 pF @ 1000 V - 74W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
FCA76N60N onsemi

FCA76N60N

MOSFET N-CH 600V 76A TO3PN

onsemi

1,348 -
Datasheet SupreMOS™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 36mOhm @ 38A, 10V 4V @ 250µA 285 nC @ 10 V ±30V 12385 pF @ 100 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
E3M0045065K Wolfspeed, Inc.

E3M0045065K

SIC, MOSFET, 45M, 650V, TO-247-4

Wolfspeed, Inc.

359 -
Datasheet E TO-247-4 Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA 64 nC @ 15 V +19V, -8V 1593 pF @ 400 V - 150W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
C3M0032120J2-TR Wolfspeed, Inc.

C3M0032120J2-TR

MOSFET N-CH 1200V 68A TO263

Wolfspeed, Inc.

575 -
Datasheet C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V - 3.6V @ 11.5mA 111 nC @ 15 V -8V, +19V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
4AK17-91 Renesas Electronics Corporation

4AK17-91

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

29,649 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FF12040J-7 fastSiC

FF12040J-7

SICFET N-CH 1200V 45A TO-263-7L

fastSiC

278 -
Datasheet Falcon TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 45A (Tc) 15V, 18V 56mOhm @ 20A, 18V 2.5V @ 40mA (Typ) 117 nC @ 800 V +18V, -8V 3129 pF @ 800 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7L
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FETs, MOSFETs FAQ

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