FETs, MOSFETs
Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJK60S5DPK-M0#T0MOSFET N-CH 600V 20A TO3PSG |
68,097 | - |
|
Datasheet | - | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | - | - | - | - | Through Hole | TO-3PSG |
|
RJK60S5DPE-00#J3MOSFET N-CH 600V 20A 4LDPAK |
40,000 | - |
|
Datasheet | - | SC-83 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Surface Mount | LDPAK |
|
RJK60S5DPP-E0#T2MOSFET N-CH 600V 20A TO220FP |
226 | - |
|
Datasheet | - | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 33.7W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
|
C3M0040120J2-TRWOLFSPEED SIC, MOSFET |
589 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
|
CGD65A055S2-T07650V GAN HEMT, 55MOHM, DFN8X8. W |
674 | - |
|
Datasheet | ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 27A (Tc) | 12V | 77mOhm @ 2.2A, 12V | 4.2V @ 10mA | 6 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
|
SCT3080KRC14SICFET N-CH 1200V 31A TO247-4L |
270 | - |
|
Datasheet | - | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
N3T035MP120D1200 V, 76A SIC MOSFET, TO-247 |
652 | - |
|
Datasheet | 1200 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A | 20V | 45mOhm @ 30A, 20V | 3V @ 15mA | 126 nC @ 20 V | +20V, -5V | 2204 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
4AM17-91POWER N AND P CHANNEL MOSFETS |
38,812 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
H5N2513PL-EN-CHANNEL POWER MOSFET |
1,189 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G3R40MT12JSIC MOSFET N-CH 75A TO263-7 |
421 | - |
|
Datasheet | G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.7V @ 18mA (Typ) | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
FCH085N80-F155MOSFET N-CH 800V 46A TO247 |
437 | - |
|
Datasheet | SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | ±20V | 10825 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
NVBGS4D1N15MCMOSFET N-CH 150V 20A/185A D2PAK |
364 | - |
|
Datasheet | - | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Ta), 185A (Tc) | 8V, 10V | 4.1mOhm @ 104A, 10V | 4.5V @ 574µA | 88.9 nC @ 10 V | ±20V | 7285 pF @ 75 V | - | 3.7W (Ta), 316W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
S3M0025120TMOSFET SILICON CARBIDE SIC 1200V |
200 | - |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
H5N5011PL-EN-CHANNEL POWER MOSFET |
1,086 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
1,853 | - |
|
Datasheet | G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
FCA76N60NMOSFET N-CH 600V 76A TO3PN |
1,348 | - |
|
Datasheet | SupreMOS™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
E3M0045065KSIC, MOSFET, 45M, 650V, TO-247-4 |
359 | - |
|
Datasheet | E | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 64 nC @ 15 V | +19V, -8V | 1593 pF @ 400 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
C3M0032120J2-TRMOSFET N-CH 1200V 68A TO263 |
575 | - |
|
Datasheet | C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | - | 3.6V @ 11.5mA | 111 nC @ 15 V | -8V, +19V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
4AK17-91N-CHANNEL POWER MOSFET |
29,649 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FF12040J-7SICFET N-CH 1200V 45A TO-263-7L |
278 | - |
|
Datasheet | Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tc) | 15V, 18V | 56mOhm @ 20A, 18V | 2.5V @ 40mA (Typ) | 117 nC @ 800 V | +18V, -8V | 3129 pF @ 800 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
FETs, MOSFETs FAQ
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