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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
DIF120SIC053-AQ Diotec Semiconductor

DIF120SIC053-AQ

MOSFET TO-247-4L N 65A 1200V

Diotec Semiconductor

433 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V - 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
DIW120SIC059-AQ Diotec Semiconductor

DIW120SIC059-AQ

MOSFET TO-247-3L N 65A 1200V

Diotec Semiconductor

430 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V - 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DIW120SIC022-AQ Diotec Semiconductor

DIW120SIC022-AQ

SIC MOSFET, TO-247-3L, N, 120A,

Diotec Semiconductor

150 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
DIF120SIC022-AQ Diotec Semiconductor

DIF120SIC022-AQ

SIC MOSFET, TO-247-4L, N, 120A,

Diotec Semiconductor

150 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
DIW120SIC023-AQ Diotec Semiconductor

DIW120SIC023-AQ

MOSFET TO-247-3L N 130A 1200V

Diotec Semiconductor

705 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 125A (Tc) 18V 23mOhm @ 75A, 18V 2.9V @ 250µA 45 nC @ 18 V - 6150 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
MMFTN3422K Diotec Semiconductor

MMFTN3422K

MOSFET, SOT-23, 30V, 4.2A, 0, 1.

Diotec Semiconductor

3,000 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.2A (Tj) 2.5V, 10V 42mOhm @ 4.2A, 10V 1.2V @ 250µA 14.5 nC @ 10 V ±12V 387 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
2N7002PW Diotec Semiconductor

2N7002PW

MOSFET, SOT-323, 60V, 0.315A, 15

Diotec Semiconductor

796 -
Datasheet - SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 315mA (Ta) 5V, 10V 1.6Ohm @ 500mA, 10V 2.4V @ 250µA 0.6 nC @ 10 V ±20V 30 pF @ 10 V - 260mW (Ta) 150°C (TJ) - - Surface Mount SOT-323
DIT050N06 Diotec Semiconductor

DIT050N06

MOSFET TO220AB N 60V 0.014OHM

Diotec Semiconductor

331 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 20mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2050 pF @ 30 V - 85W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
DID3A2N65 Diotec Semiconductor

DID3A2N65

MOSFET IPAK N 650V 3.2A

Diotec Semiconductor

9,363 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 2.6Ohm @ 2A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 581 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
MMFTN138K Diotec Semiconductor

MMFTN138K

MOSFET SOT23 N 60V 1.6OHM 150C

Diotec Semiconductor

5,844 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 360mA (Ta) 2.5V, 10V 1.6Ohm @ 350mA, 10V 1.6V @ 250µA 1.3 nC @ 10 V ±20V 51.3 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23 (TO-236)
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FETs, MOSFETs FAQ

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