PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
CXDM4060N TR PBFREE Central Semiconductor Corp

CXDM4060N TR PBFREE

MOSFET N-CH 40V 6A SOT-89

Central Semiconductor Corp

1,088 -
Datasheet - TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 31mOhm @ 6A, 10V 3V @ 250µA 12 nC @ 10 V 20V 730 pF @ 20 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-89
TK30E06N1,S1X Toshiba Semiconductor and Storage

TK30E06N1,S1X

MOSFET N-CH 60V 43A TO220

Toshiba Semiconductor and Storage

69 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Ta) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 53W (Tc) 150°C (TJ) - - Through Hole TO-220
TK1K0A60F,S4X Toshiba Semiconductor and Storage

TK1K0A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

67 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 3.8A, 10V 4V @ 770µA 24 nC @ 10 V ±30V 890 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
IPA50R500CEXKSA2 Infineon Technologies

IPA50R500CEXKSA2

MOSFET N-CH 500V 5.4A TO220

Infineon Technologies

34 -
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5.4A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
BUK7Y14-80EX Nexperia USA Inc.

BUK7Y14-80EX

MOSFET N-CH 80V 65A LFPAK56

Nexperia USA Inc.

75 -
Datasheet TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 65A (Tc) 10V 14mOhm @ 15A, 10V 4V @ 1mA 44.8 nC @ 10 V ±20V 3155 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
TK3R1A04PL,S4X Toshiba Semiconductor and Storage

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage

77 -
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK5R3A06PL,S4X Toshiba Semiconductor and Storage

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

75 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C - - Through Hole TO-220SIS
TK4R3A06PL,S4X Toshiba Semiconductor and Storage

TK4R3A06PL,S4X

MOSFET N-CH 60V 68A TO220SIS

Toshiba Semiconductor and Storage

54 -
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK650A60F,S4X Toshiba Semiconductor and Storage

TK650A60F,S4X

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

74 -
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1.16mA 34 nC @ 10 V ±30V 1320 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK32A12N1,S4X Toshiba Semiconductor and Storage

TK32A12N1,S4X

MOSFET N-CH 120V 32A TO220SIS

Toshiba Semiconductor and Storage

66 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7R4A10PL,S4X Toshiba Semiconductor and Storage

TK7R4A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

100 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 7.4mOhm @ 25A, 10V 2.5V @ 500µA 44 nC @ 10 V ±20V 2800 pF @ 50 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK22E10N1,S1X Toshiba Semiconductor and Storage

TK22E10N1,S1X

MOSFET N CH 100V 52A TO220

Toshiba Semiconductor and Storage

31 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 72W (Tc) 150°C (TJ) - - Through Hole TO-220
DMNH10H028SCT Diodes Incorporated

DMNH10H028SCT

MOSFET N-CH 100V 60A TO220AB

Diodes Incorporated

91 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 28mOhm @ 20A, 10V 4V @ 250µA 31.9 nC @ 10 V ±20V 1942 pF @ 50 V - 2.8W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220-3
TK6R7A10PL,S4X Toshiba Semiconductor and Storage

TK6R7A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

42 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 4.5V, 10V 6.7mOhm @ 28A, 10V 2.5V @ 500µA 58 nC @ 10 V ±20V 3455 pF @ 50 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
NVTFS5C454NLTAG onsemi

NVTFS5C454NLTAG

MOSFET N-CHANNEL 40V 85A 8WDFN

onsemi

29 -
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1600 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IPD42DP15LMATMA1 Infineon Technologies

IPD42DP15LMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies

75 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 150 V 1.7A (Ta), 9A (Tc) 4.5V, 10V 420mOhm @ 8.2A, 10V 2V @ 1.04mA 43 nC @ 10 V ±20V 2100 pF @ 75 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
STP100N6F7 STMicroelectronics

STP100N6F7

MOSFET N-CH 60V 100A TO220

STMicroelectronics

67 -
Datasheet STripFET™ F7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 5.6mOhm @ 50A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1980 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
RCX200N20 Rohm Semiconductor

RCX200N20

MOSFET N-CH 200V 20A TO220FM

Rohm Semiconductor

33 -
Datasheet - TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 5V @ 1mA 40 nC @ 10 V ±30V 1900 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
STB30NF10T4 STMicroelectronics

STB30NF10T4

MOSFET N-CH 100V 35A D2PAK

STMicroelectronics

1,027 -
Datasheet STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 45mOhm @ 15A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 1180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPP082N10NF2SAKMA1 Infineon Technologies

IPP082N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

68 -
Datasheet StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 77A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 3.8W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
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FETs, MOSFETs FAQ

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