PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BUK9516-75B,127 NXP USA Inc.

BUK9516-75B,127

MOSFET N-CH 75V 67A TO220AB

NXP USA Inc.

3,551 -
Datasheet TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 67A (Tc) 4.5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 35 nC @ 5 V ±15V 4034 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
FQPF6N40CT Fairchild Semiconductor

FQPF6N40CT

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor

680 -
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQB7P06TM Fairchild Semiconductor

FQB7P06TM

MOSFET P-CH 60V 7A D2PAK

Fairchild Semiconductor

549 -
Datasheet QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDS4488 onsemi

FDS4488

MOSFET N-CH 30V 7.9A 8SOIC

onsemi

256 -
Datasheet * - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
IRFR220 Harris Corporation

IRFR220

MOSFET N-CH 200V 4.6A TO252AA

Harris Corporation

528

349+:$0.86000

Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) - 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
FQD6N50CTF Fairchild Semiconductor

FQD6N50CTF

MOSFET N-CH 500V 4.5A DPAK

Fairchild Semiconductor

750 -
Datasheet QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 61W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
2SK3707-1EX onsemi

2SK3707-1EX

NCH 4V DRIVE SERIES

onsemi

700 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
BUZ76 Harris Corporation

BUZ76

N-CHANNEL POWER MOSFET

Harris Corporation

700 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 1mA - ±20V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IPP139N08N3GXKSA1 Infineon Technologies

IPP139N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies

632 -
Datasheet OptiMOS™ 3 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
FQPF19N10 Fairchild Semiconductor

FQPF19N10

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor

582 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 10V 100mOhm @ 6.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 780 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
IPP80N04S306AKSA1 Infineon Technologies

IPP80N04S306AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

2,929 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRF730R4587 Harris Corporation

IRF730R4587

5.5A 400V 1.000 OHM N-CHANNEL

Harris Corporation

1,000 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
BUK7611-55B,118 NXP USA Inc.

BUK7611-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

720 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
PSMN8R5-100ESQ NXP USA Inc.

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.

676 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
IPP47N10SL26AKSA1 Infineon Technologies

IPP47N10SL26AKSA1

MOSFET N-CH 100V 47A TO220-3

Infineon Technologies

9,993 -
Datasheet SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
FDP6030BL Fairchild Semiconductor

FDP6030BL

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

800 -
Datasheet PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
G700P06D3 Goford Semiconductor

G700P06D3

P-60V,-18A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

770 -
Datasheet G 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1446 pF @ 30 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
DMP2540UCB9-7 Diodes Incorporated

DMP2540UCB9-7

MOSFET P-CH 25V 4A U-WLB1515-9

Diodes Incorporated

134 -
Datasheet - 9-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 25 V 4A (Ta) 1.8V, 4.5V 40mOhm @ 2A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V -6V 450 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1515-9
RF1S15N08L Harris Corporation

RF1S15N08L

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A - - - - - - - - - - - Surface Mount TO-263AB
IRFR9110 Harris Corporation

IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Harris Corporation

554 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) - 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
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FETs, MOSFETs FAQ

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