FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STP9NK60Z MOSFET N-CH 600V 7A TO220AB STMicroelectronics	21	-	RFQ	Datasheet	SuperMESH™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	950mOhm @ 3.5A, 10V	4.5V @ 100µA	53 nC @ 10 V	±30V	1110 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
STF26N60M2 MOSFET N-CH 600V 20A TO220FP STMicroelectronics	2,272	-	RFQ	Datasheet	MDmesh™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	165mOhm @ 11A, 10V	4V @ 250µA	-	±25V	-	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
TK72A12N1,S4X MOSFET N-CH 120V 72A TO220SIS Toshiba Semiconductor and Storage	5,341	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	72A (Tc)	10V	4.5mOhm @ 36A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	8100 pF @ 60 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IQE050N08NM5CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	9,891	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	16A (Ta), 99A (Tc)	6V, 10V	5mOhm @ 20A, 10V	3.8V @ 49µA	44 nC @ 10 V	±20V	2900 pF @ 40 V	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-1
IPW95R310PFD7XKSA1 MOSFET N-CH 950V 17.5A TO247-3 Infineon Technologies	7,433	-	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	950 V	17.5A (Tc)	10V	310mOhm @ 10.4A, 10V	3.5V @ 520µA	61 nC @ 10 V	±20V	1765 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41
IXTP1R6N50D2 MOSFET N-CH 500V 1.6A TO220AB Littelfuse Inc.	5	-	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tc)	-	2.3Ohm @ 800mA, 0V	-	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTP1R6N100D2 MOSFET N-CH 1000V 1.6A TO220AB Littelfuse Inc.	4	-	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	1.6A (Tc)	10V	10Ohm @ 800mA, 0V	-	27 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTY1R6N50D2 MOSFET N-CH 500V 1.6A TO252 Littelfuse Inc.	5,491	-	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tc)	-	2.3Ohm @ 800mA, 0V	-	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IRFS11N50APBF MOSFET N-CH 500V 11A D2PAK Vishay Siliconix	3,156	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPDD60R150G7XTMA1 MOSFET N-CH 600V 16A HDSOP-10 Infineon Technologies	5,307	-	RFQ	Datasheet	CoolMOS™ G7	10-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	150mOhm @ 5.3A, 10V	4V @ 260µA	23 nC @ 10 V	±20V	902 pF @ 400 V	-	95W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-10-1
TJ200F04M3L,LXHQ MOSFET P-CH 40V 200A TO220SM Toshiba Semiconductor and Storage	7,070	-	RFQ	Datasheet	U-MOSVI	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	1.8mOhm @ 100A, 10V	3V @ 1mA	460 nC @ 10 V	+10V, -20V	1280 pF @ 10 V	-	375W (Tc)	175°C	-	-	Surface Mount	TO-220SM(W)
SUP60030E-GE3 MOSFET N-CH 80V 120A TO220AB Vishay Siliconix	9,429	-	RFQ	Datasheet	TrenchFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	7.5V, 10V	3.4mOhm @ 30A, 10V	4V @ 250µA	141 nC @ 10 V	±20V	7910 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IPW60R190P6FKSA1 MOSFET N-CH 600V 20.2A TO247-3 Infineon Technologies	10	-	RFQ	Datasheet	CoolMOS™ P6	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	4.5V @ 630µ	11 nC @ 10 V	±20V	1750 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXTY08N100D2 MOSFET N-CH 1000V 800MA TO252 Littelfuse Inc.	7,934	-	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	800mA (Tc)	-	21Ohm @ 400mA, 0V	-	14.6 nC @ 5 V	±20V	325 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IPA60R199CPXKSA1 MOSFET N-CH 650V 16A TO220-FP Infineon Technologies	9,386	-	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	16A (Tc)	10V	199mOhm @ 9.9A, 10V	3.5V @ 1.1mA	43 nC @ 10 V	±20V	1520 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
TK20E60W5,S1VX X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	17	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	175mOhm @ 10A, 10V	4.5V @ 1mA	55 nC @ 10 V	±30V	1800 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-220
IXTY1R6N50D2-TRL MOSFET N-CH 500V 1.6A TO252AA Littelfuse Inc.	5,128	-	RFQ	Datasheet	Depletion	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	1.6A (Tj)	0V	2.3Ohm @ 800mA, 0V	4.5V @ 250µA	23.7 nC @ 5 V	±20V	645 pF @ 25 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
IXTP3N100D2 MOSFET N-CH 1000V 3A TO220AB Littelfuse Inc.	3,480	-	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	3A (Tc)	-	5.5Ohm @ 1.5A, 0V	-	37.5 nC @ 5 V	±20V	1020 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
AOT66916L MOSFET N-CH 100V 35.5/120A TO220 Alpha & Omega Semiconductor Inc.	8,017	-	RFQ	Datasheet	AlphaSGT™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35.5A (Ta), 120A (Tc)	6V, 10V	3.6mOhm @ 20A, 10V	3.5V @ 250µA	78 nC @ 10 V	±20V	6180 pF @ 50 V	-	8.3W (Ta), 277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TK100A10N1,S4X MOSFET N-CH 100V 100A TO220SIS Toshiba Semiconductor and Storage	17	-	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	3.8mOhm @ 50A, 10V	4V @ 1mA	140 nC @ 10 V	±20V	8800 pF @ 50 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FETs, MOSFETs FAQ

What FETs, MOSFETs components can I source from EGOO?

You can browse available FETs, MOSFETs product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete FETs, MOSFETs parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.