PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SQS166ELNW-T1_GE3 Vishay Siliconix

SQS166ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 60V (D-S)

Vishay Siliconix

9,015 -
Datasheet TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1790 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
SQ2361CEES-T1_GE3 Vishay Siliconix

SQ2361CEES-T1_GE3

MOSFET P-CH 60V 2.8A SOT23-3

Vishay Siliconix

9,754 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Tc) 4.5V, 10V 170mOhm @ 2.4A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 620 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRFR420PBF-BE3 Vishay Siliconix

IRFR420PBF-BE3

N-CHANNEL 500V

Vishay Siliconix

3,728 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
MCAC30P03-TP Micro Commercial Co

MCAC30P03-TP

MOSFET P-CH 30 30A DFN5060

Micro Commercial Co

3,376 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 10 V ±20V 1385 pF @ 15 V - 41.7W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
SQ2310CES-T1_GE3 Vishay Siliconix

SQ2310CES-T1_GE3

MOSFET N-CH 20V 6A TO236

Vishay Siliconix

3,697 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.8V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 590 pF @ 10 V - 2W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
PJQ44611AP-AU_R2_002A1 Panjit International Inc.

PJQ44611AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

6,359 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD13N10A_L2_00001 Panjit International Inc.

PJD13N10A_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

2,704 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.9A (Ta), 13A (Tc) 4.5V, 10V 115mOhm @ 6.5A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1413 pF @ 25 V - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PJL9433A_R2_00001 Panjit International Inc.

PJL9433A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,444 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 110mOhm @ 3.2A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 785 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SQJ118EP-T1_GE3 Vishay Siliconix

SQJ118EP-T1_GE3

AUTOMOTIVE N-CHANNEL 100V (D-S)

Vishay Siliconix

8,108 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 19.7mOhm @ 15A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 2930 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF820ALPBF Vishay Siliconix

IRF820ALPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

5,210 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
SIR5810DP-T1-RE3 Vishay Siliconix

SIR5810DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

7,724 -
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.5A (Ta), 53.3A (Tc) 7.5V, 10V 10mOhm @ 10A, 10V 4V @ 250µA 18.5 nC @ 10 V ±20V 900 pF @ 40 V - 3W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQS110ENW-T1_GE3 Vishay Siliconix

SQS110ENW-T1_GE3

AUTOMOTIVE N-CHANNEL 100V (D-S)

Vishay Siliconix

4,991 -
Datasheet TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 13.2mOhm @ 10A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 3449 pF @ 25 V - 119W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
PJQ44609AP-AU_R2_002A1 Panjit International Inc.

PJQ44609AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

7,783 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS5810DN-T1-GE3 Vishay Siliconix

SISS5810DN-T1-GE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

5,943 -
Datasheet TrenchFET® Gen V PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13.9A (Ta), 51A (Tc) 7.5V, 10V 10mOhm @ 10A, 10V 4V @ 250µA 18.5 nC @ 10 V ±20V 900 pF @ 40 V - 3.9W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIR5208DP-T1-RE3 Vishay Siliconix

SIR5208DP-T1-RE3

N-CHANNEL 20 V (D-S) MOSFET 150C

Vishay Siliconix

4,366 -
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 48A (Ta), 165A (Tc) 2.5V, 8V 1.3mOhm @ 10A, 8V 1.3V @ 250µA 68 nC @ 10 V +8V, -7V 4100 pF @ 10 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHFZ48S-GE3 Vishay Siliconix

SIHFZ48S-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

2,002 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
PJQ44607AP-AU_R2_002A1 Panjit International Inc.

PJQ44607AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

2,914 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS26LDN-T1-UE3 Vishay Siliconix

SISS26LDN-T1-UE3

N-CHANNEL 60 V (D-S) 150C MOSFET

Vishay Siliconix

6,561 -
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 23.7A (Ta), 81.2A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1980 pF @ 30 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIRA60DDP-T1-UE3 Vishay Siliconix

SIRA60DDP-T1-UE3

N-CHANNEL 30 V (D-S) 150C MOSFET

Vishay Siliconix

6,067 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Ta), 241A (Tc) 4.5V, 10V 0.9mOhm @ 20A, 10V 2.2V @ 250µA 125 nC @ 10 V +20V, -16V 7975 pF @ 15 V - 5.7W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ4441P_R2_00001 Panjit International Inc.

PJQ4441P_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,651 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.5A (Ta), 44A (Tc) 4.5V, 10V 17mOhm @ 10A, 10V 2.5V @ 250µA 19 nC @ 4.5 V ±20V 2030 pF @ 25 V - 2W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN3333-8
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FETs, MOSFETs FAQ

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