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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FBG04N30BC EPC Space, LLC

FBG04N30BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC

141 -
Datasheet FSMD-B 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
EPC7003AC EPC Space, LLC

EPC7003AC

GAN FET HEMT 100V 5A COTS 4UB

EPC Space, LLC

138 -
Datasheet - 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 10A (Tc) 10V 42mOhm @ 10A, 5V 2.5V @ 1.4mA 1.5 nC @ 5 V +6V, -4V 168 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
FBG30N04CC EPC Space, LLC

FBG30N04CC

GAN FET HEMT 300V4A COTS 4FSMD-C

EPC Space, LLC

165 -
Datasheet - 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
FBG20N18BSH EPC Space, LLC

FBG20N18BSH

GAN FET HEMT 200V 18A 4FSMD-B

EPC Space, LLC

47 -
Datasheet e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 200 V 18A (Tc) 5V 28mOhm @ 18A, 5V 2.5V @ 3mA 7 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
FBG10N30BSH EPC Space, LLC

FBG10N30BSH

GAN FET HEMT 100V 30A 4FSMD-B

EPC Space, LLC

40 -
Datasheet eGaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 12mOhm @ 30A, 5V 2.5V @ 5mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
CDA04N30X1C EPC Space, LLC

CDA04N30X1C

GANFET 40V 30A .004 OHM 4DAPT

EPC Space, LLC

88 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
CDA10N30X1C EPC Space, LLC

CDA10N30X1C

GANFET 100V 30A .009 OHM 4DAPT

EPC Space, LLC

100 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
CDA10N05X2C EPC Space, LLC

CDA10N05X2C

GANFET 100V 5A .030 OHM 4DAPT

EPC Space, LLC

100 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
CDA20N18X3C EPC Space, LLC

CDA20N18X3C

GANFET 200V 18A .025 OHM 4DAPT

EPC Space, LLC

64 -
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
EPC7004BC EPC Space, LLC

EPC7004BC

GAN FET HEMT100V30A COTS 4FSMD-B

EPC Space, LLC

41 -
Datasheet - 4-SMD, No Lead Tray Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 13mOhm @ 30A, 5V 2.5V @ 7mA 7 nC @ 5 V +6V, -4V 797 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
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FETs, MOSFETs FAQ

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