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Diode Arrays

Compare the current Diode Arrays Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Diode Configuration Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Grade Qualification Mounting Type Supplier Device Package
TSF20H200C Taiwan Semiconductor Corporation

TSF20H200C

DIODE ARR SCHOTTKY 200V ITO220AB

Taiwan Semiconductor Corporation

9,593 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Not For New Designs 1 Pair Common Cathode Schottky 200 V 10A 930 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 200 V -55°C ~ 150°C - - Through Hole ITO-220AB
TSF30L200C Taiwan Semiconductor Corporation

TSF30L200C

DIODE ARR SCHOTTKY 200V ITO220AB

Taiwan Semiconductor Corporation

3,397 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Not For New Designs 1 Pair Common Cathode Schottky 200 V 15A 960 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 200 V -55°C ~ 150°C - - Through Hole ITO-220AB
SF807G Taiwan Semiconductor Corporation

SF807G

DIODE ARRAY GP 500V 8A TO-220AB

Taiwan Semiconductor Corporation

8,690 -
Datasheet - TO-220-3 Tube Active 1 Pair Common Cathode Standard 500 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V -55°C ~ 150°C - - Through Hole TO-220AB
SF807GH Taiwan Semiconductor Corporation

SF807GH

DIODE ARRAY GP 500V 8A TO-220AB

Taiwan Semiconductor Corporation

4,943 -
Datasheet - TO-220-3 Tube Active 1 Pair Common Cathode Standard 500 V 8A 1.7 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V -55°C ~ 150°C Automotive AEC-Q101 Through Hole TO-220AB
MBRF20H150CT Taiwan Semiconductor Corporation

MBRF20H150CT

DIODE ARR SCHOTTKY 150V ITO220AB

Taiwan Semiconductor Corporation

2,011 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active 1 Pair Common Cathode Schottky 150 V 20A 970 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 150 V -55°C ~ 175°C - - Through Hole ITO-220AB
MBRF20H200CT Taiwan Semiconductor Corporation

MBRF20H200CT

DIODE ARR SCHOTTKY 200V ITO220AB

Taiwan Semiconductor Corporation

2,871 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active 1 Pair Common Cathode Schottky 200 V 20A 970 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 200 V -55°C ~ 175°C - - Through Hole ITO-220AB
MBR30100CT-Y Taiwan Semiconductor Corporation

MBR30100CT-Y

DIODE ARR SCHOT 100V 30A TO220AB

Taiwan Semiconductor Corporation

6,320 -
Datasheet - TO-220-3 Tube Active 1 Pair Common Cathode Schottky 100 V 30A 940 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 100 V -55°C ~ 150°C - - Through Hole TO-220AB
MBRF20H200CTH Taiwan Semiconductor Corporation

MBRF20H200CTH

DIODE ARR SCHOTTKY 200V ITO220AB

Taiwan Semiconductor Corporation

4,989 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active 1 Pair Common Cathode Schottky 200 V 20A 970 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 200 V -55°C ~ 175°C Automotive AEC-Q101 Through Hole ITO-220AB
MBR3080CT-Y Taiwan Semiconductor Corporation

MBR3080CT-Y

DIODE ARR SCHOTT 80V 30A TO220AB

Taiwan Semiconductor Corporation

3,986 -
Datasheet - TO-220-3 Tube Active 1 Pair Common Cathode Schottky 80 V 30A 940 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 80 V -55°C ~ 150°C - - Through Hole TO-220AB
MBRF25100CT-Y Taiwan Semiconductor Corporation

MBRF25100CT-Y

DIODE ARR SCHOTTKY 100V ITO220AB

Taiwan Semiconductor Corporation

2,964 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active 1 Pair Common Cathode Schottky 100 V 25A 850 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V -55°C ~ 150°C - - Through Hole ITO-220AB
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