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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S25MR GeneSiC Semiconductor

S25MR

DIODE GEN PURP 1KV 25A DO220AA

GeneSiC Semiconductor

7,691 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25Q GeneSiC Semiconductor

S25Q

DIODE GEN PURP 1.2KV 25A DO203AA

GeneSiC Semiconductor

8,868 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S25QR GeneSiC Semiconductor

S25QR

DIODE GEN PURP 1.2KV 25A DO220AA

GeneSiC Semiconductor

3,266 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1200 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
FR6KR05 GeneSiC Semiconductor

FR6KR05

DIODE GEN PURP REV 800V 6A DO4

GeneSiC Semiconductor

4,582 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 800 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR6MR05 GeneSiC Semiconductor

FR6MR05

DIODE GEN PURP REV 1KV 6A DO4

GeneSiC Semiconductor

8,656 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
GC15MPS12-220 GeneSiC Semiconductor

GC15MPS12-220

DIODE SIL CARB 1.2KV 82A TO220-2

GeneSiC Semiconductor

9,148 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 82A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 14 µA @ 1200 V 1089pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GC10MPS12-252 GeneSiC Semiconductor

GC10MPS12-252

DIODE SIL CARB 1.2KV 50A TO252-2

GeneSiC Semiconductor

5,200 -
Datasheet SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 660pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GB10SLT12-252 GeneSiC Semiconductor

GB10SLT12-252

DIODE SIL CARB 1.2KV 10A TO252

GeneSiC Semiconductor

6,387 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 2 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 520pF @ 1V, 1MHz - - Surface Mount TO-252 -55°C ~ 175°C
GB05MPS17-247 GeneSiC Semiconductor

GB05MPS17-247

DIODE SIL CARB 1.7KV 25A TO247-2

GeneSiC Semiconductor

5,897 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 25A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 6 µA @ 1700 V 334pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GC15MPS12-247 GeneSiC Semiconductor

GC15MPS12-247

DIODE SIL CARB 1.2KV 75A TO247-2

GeneSiC Semiconductor

2,366 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 75A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 14 µA @ 1200 V 1089pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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Single Diodes FAQ

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