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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDH10G65C6XKSA1 Infineon Technologies

IDH10G65C6XKSA1

DIODE SIL CARB 650V 24A TO220-2

Infineon Technologies

869 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 24A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 420 V 495pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDW75D65D1XKSA1 Infineon Technologies

IDW75D65D1XKSA1

DIODE GEN PURP 650V 150A TO247-3

Infineon Technologies

2,129 -
Datasheet - TO-247-3 Tube Active Standard 650 V 150A 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 108 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
IDM10G120C5XTMA1 Infineon Technologies

IDM10G120C5XTMA1

DIODE SIL CARB 1.2KV 38A TO252-2

Infineon Technologies

4,234 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 12 V 29pF @ 800V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 150°C
IDH10G120C5XKSA1 Infineon Technologies

IDH10G120C5XKSA1

DIODE SIL CARB 1.2KV 10A TO220-1

Infineon Technologies

1,175 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 1200 V 525pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDDD16G65C6XTMA1 Infineon Technologies

IDDD16G65C6XTMA1

DIODE SIL CARB 650V 43A HDSOP-10

Infineon Technologies

4,841 -
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 43A - No Recovery Time > 500mA (Io) 0 ns 53 µA @ 420 V 783pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
IDH16G65C6XKSA1 Infineon Technologies

IDH16G65C6XKSA1

DIODE SIL CARB 650V 34A TO220-2

Infineon Technologies

3,011 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 34A 1.35 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 53 µA @ 420 V 783pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDH20G65C6XKSA1 Infineon Technologies

IDH20G65C6XKSA1

DIODE SIL CARB 650V 41A TO220-2

Infineon Technologies

1,342 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 41A 1.35 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 67 µA @ 420 V 970pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDH20G65C5XKSA2 Infineon Technologies

IDH20G65C5XKSA2

DIODE SIL CARB 650V 20A TO220-1

Infineon Technologies

864 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDW20G65C5XKSA1 Infineon Technologies

IDW20G65C5XKSA1

DIODE SIL CARB 650V 20A TO247-3

Infineon Technologies

270 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
IDH20G120C5XKSA1 Infineon Technologies

IDH20G120C5XKSA1

DIODE SIL CARB 1.2KV 56A TO220-1

Infineon Technologies

974 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 56A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 123 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
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Single Diodes FAQ

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