PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-8ETX06STRR-M3 Vishay General Semiconductor - Diodes Division

VS-8ETX06STRR-M3

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,318 -
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 8A 3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 24 ns 50 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
GPA803H Taiwan Semiconductor Corporation

GPA803H

8A, 200V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,096 -
Datasheet - TO-220-2 Tube Active Standard 200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA804H Taiwan Semiconductor Corporation

GPA804H

8A, 400V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

8,526 -
Datasheet - TO-220-2 Tube Active Standard 400 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA803 Taiwan Semiconductor Corporation

GPA803

8A, 200V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,344 -
Datasheet - TO-220-2 Tube Active Standard 200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA802H Taiwan Semiconductor Corporation

GPA802H

8A, 100V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

2,143 -
Datasheet - TO-220-2 Tube Active Standard 100 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA802 Taiwan Semiconductor Corporation

GPA802

8A, 100V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

3,681 -
Datasheet - TO-220-2 Tube Active Standard 100 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA801 Taiwan Semiconductor Corporation

GPA801

8A, 50V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

9,977 -
Datasheet - TO-220-2 Tube Active Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
GPA801H Taiwan Semiconductor Corporation

GPA801H

8A, 50V, STANDARD RECTIFIER

Taiwan Semiconductor Corporation

4,843 -
Datasheet - TO-220-2 Tube Active Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
BYV29G-600,127 WeEn Semiconductors

BYV29G-600,127

DIODE GEN PURP 600V 9A I2PAK

WeEn Semiconductors

8,282 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Standard 600 V 9A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - - - Through Hole TO-262 (I2PAK) 150°C (Max)
BYV25FB-600,118 WeEn Semiconductors

BYV25FB-600,118

DIODE GEN PURP 600V 5A D2PAK

WeEn Semiconductors

8,885 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 5A 1.9 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Surface Mount D2PAK 150°C (Max)
BYC10-600PQ WeEn Semiconductors

BYC10-600PQ

DIODE GEN PURP 600V 10A TO220AC

WeEn Semiconductors

9,577 -
Datasheet - TO-220-2 Tube Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 19 ns - - - - Through Hole TO-220AC 150°C (Max)
BYC8-1200PQ WeEn Semiconductors

BYC8-1200PQ

DIODE GEN PURP 1.2KV 8A TO220AC

WeEn Semiconductors

3,231 -
Datasheet - TO-220-2 Bulk Active Standard 1200 V 8A 3.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 1200 V - - - Through Hole TO-220AC 175°C (Max)
V20K202-M3/I Vishay General Semiconductor - Diodes Division

V20K202-M3/I

DIODE SCHOTTKY 200V 3.2A FLATPAK

Vishay General Semiconductor - Diodes Division

9,425 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active Schottky 200 V 3.2A 1.02 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 200 V 800pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
V20K170-M3/I Vishay General Semiconductor - Diodes Division

V20K170-M3/I

DIODE SCHOTTKY 170V 3.2A FLATPAK

Vishay General Semiconductor - Diodes Division

3,430 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active Schottky 170 V 3.2A 1.02 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 170 V 800pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
AR3PDHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PDHM3_A/H

DIODE AVALANCHE 200V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2,879 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 200 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 200 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PGHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PGHM3_A/H

DIODE AVALANCHE 400V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2,105 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 200 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PJHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PJHM3_A/H

DIODE AVALANCHE 600V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

7,886 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 1.8A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V 44pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PKHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PKHM3_A/H

DIODE AVALANCHE 800V 1.6A TO277A

Vishay General Semiconductor - Diodes Division

7,117 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 1.6A 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 34pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR3PMHM3_A/H Vishay General Semiconductor - Diodes Division

AR3PMHM3_A/H

DIODE AVALANCHE 1KV 1.6A TO277A

Vishay General Semiconductor - Diodes Division

9,929 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 1.6A 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 34pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU2PDHM3_A/H Vishay General Semiconductor - Diodes Division

AU2PDHM3_A/H

DIODE AVALANCHE 200V 1.6A TO277A

Vishay General Semiconductor - Diodes Division

2,294 -
Datasheet eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 200 V 1.6A 1.9 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 200 V 42pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
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Single Diodes FAQ

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