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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5416/TR Microchip Technology

JAN1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

7,783 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5807/TR Microchip Technology

JAN1N5807/TR

DIODE GEN PURP 50V 6A

Microchip Technology

3,641 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JAN1N5811/TR Microchip Technology

JAN1N5811/TR

DIODE GEN PURP 150V 6A

Microchip Technology

8,857 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JAN1N5417/TR Microchip Technology

JAN1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

7,363 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N6643US/TR Microchip Technology

JAN1N6643US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

8,243 -
Datasheet - SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 50 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5711/TR Microchip Technology

1N5711/TR

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

5,139 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5711E3 Microchip Technology

1N5711E3

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

8,728 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
CDLL1A50 Microchip Technology

CDLL1A50

DIODE SCHOTTKY 50V 1A DO213AB

Microchip Technology

5,485 -
Datasheet - DO-213AB, MELF Bulk Active Schottky 50 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 50 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB -
JAN1N5809/TR Microchip Technology

JAN1N5809/TR

DIODE GEN PURP 100V 6A

Microchip Technology

8,434 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JAN1N5806US/TR Microchip Technology

JAN1N5806US/TR

DIODE GEN PURP 150V 2.5A D-5A

Microchip Technology

5,507 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
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Single Diodes FAQ

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