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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6074US Microchip Technology

1N6074US

DIODE GEN PURP 100V 3A D-5A

Microchip Technology

9,257 -
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 3A 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 100 V - - - Surface Mount D-5A -65°C ~ 155°C
JAN1N5807URS Microchip Technology

JAN1N5807URS

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

6,683 -
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5809URS Microchip Technology

JAN1N5809URS

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

3,645 -
Datasheet - SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5811URS Microchip Technology

JAN1N5811URS

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

4,177 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5802US/TR Microchip Technology

JANTX1N5802US/TR

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

7,951 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N6642UB Microchip Technology

1N6642UB

DIODE GEN PURP UB

Microchip Technology

4,260 -
Datasheet - 4-SMD, No Lead Bulk Active Standard - - 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns - 5pF @ 0V, 1MHz - - Surface Mount UB -
JANTX1N6628/TR Microchip Technology

JANTX1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

7,635 -
Datasheet - E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTX1N6628 Microchip Technology

JANTX1N6628

DIODE GEN PURP 660V 1.75A AXIAL

Microchip Technology

7,394 -
Datasheet - E, Axial Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5554US/TR Microchip Technology

JANTXV1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

4,068 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5553US/TR Microchip Technology

JANTXV1N5553US/TR

DIODE GEN PURP 800V 3A B SQ-MELF

Microchip Technology

4,155 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
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Single Diodes FAQ

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