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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N6628US Microchip Technology

JANTXV1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

4,492 -
Datasheet - SQ-MELF, E Bulk Discontinued at Digi-Key Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTX1N6078 Microchip Technology

JANTX1N6078

DIODE GEN PURP 150V 1.3A A-PAK

Microchip Technology

3,511 -
Datasheet - A, Axial Bulk Active Standard 150 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
UES1304HR2 Microchip Technology

UES1304HR2

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

5,765 -
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 200 V - - - Through Hole B, Axial -
JANTXV1N6628US/TR Microchip Technology

JANTXV1N6628US/TR

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

8,291 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6628U/TR Microchip Technology

JANTXV1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,159 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5712-1 Microchip Technology

JANTXV1N5712-1

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

8,958 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N6536 Microchip Technology

1N6536

DIODE GEN PURP 400V 1A A AXIAL

Microchip Technology

5,894 -
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 400 V - - - Through Hole A, Axial -
UES1003 Microchip Technology

UES1003

DIODE GEN PURP 150V 1A A AXIAL

Microchip Technology

7,286 -
Datasheet - A, Axial Bulk Active Standard 150 V 1A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Through Hole A, Axial -55°C ~ 175°C
JANS1N5811US Microchip Technology

JANS1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

8,651 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5712-1/TR Microchip Technology

JANTXV1N5712-1/TR

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

3,396 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
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Single Diodes FAQ

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