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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N6078 Microchip Technology

JANTXV1N6078

DIODE GEN PURP 150V 1.3A E-PAK

Microchip Technology

2,620 -
Datasheet - E, Axial Bulk Active Standard 150 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANS1N5807 Microchip Technology

JANS1N5807

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

5,222 -
Datasheet - B, Axial Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANS1N5807/TR Microchip Technology

JANS1N5807/TR

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

3,218 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5804URS Microchip Technology

JANTXV1N5804URS

DIODE GEN PURP 100V 1A A-MELF

Microchip Technology

4,435 -
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTXV1N5806URS Microchip Technology

JANTXV1N5806URS

DIODE GEN PURP 150V 1A A-MELF

Microchip Technology

9,567 -
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTXV1N5806URS/TR Microchip Technology

JANTXV1N5806URS/TR

UFR,FRR

Microchip Technology

8,194 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5804URS/TR Microchip Technology

JANTXV1N5804URS/TR

UFR,FRR

Microchip Technology

3,095 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
UES1304 Microchip Technology

UES1304

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

5,298 -
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole B, Axial -55°C ~ 150°C
JAN1N6642UB2 Microchip Technology

JAN1N6642UB2

DIODE GEN PURP 75V 300MA UB2

Microchip Technology

7,365 -
Datasheet - 2-SMD, No Lead Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
JAN1N6642UB2R Microchip Technology

JAN1N6642UB2R

DIODE GEN PURP 75V 300MA UB2

Microchip Technology

2,931 -
Datasheet - 2-SMD, No Lead Bulk Active Standard, Reverse Polarity 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
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Single Diodes FAQ

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