PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-50PFR120 Vishay General Semiconductor - Diodes Division

VS-50PFR120

DIODE GP REV 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division

7,918 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 50A 1.4 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
SCS206AMC Rohm Semiconductor

SCS206AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

9,883 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
LSIC2SD120C05 Littelfuse Inc.

LSIC2SD120C05

DIODE SIC 1.2KV 18.1A TO252L

Littelfuse Inc.

7,658 -
Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 18.1A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 310pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
1N5614/TR Microchip Technology

1N5614/TR

DIODE GEN PURP 200V 1A

Microchip Technology

6,641 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Through Hole A, Axial -65°C ~ 200°C
GKN26/04 GeneSiC Semiconductor

GKN26/04

DIODE GEN PURP 400V 25A DO4

GeneSiC Semiconductor

8,234 -
Datasheet - DO-203AA, DO-4, Stud Bulk Obsolete Standard 400 V 25A 1.55 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 400 V - - - Chassis, Stud Mount DO-4 -40°C ~ 180°C
JAN1N3613 Microchip Technology

JAN1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,247 -
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N3611/TR Microchip Technology

JAN1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

5,534 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N485A/TR Microchip Technology

1N485A/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

7,930 -
Datasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
1N485/TR Microchip Technology

1N485/TR

DIODE GEN PURP 180V 100MA DO7

Microchip Technology

5,048 -
Datasheet - DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 180 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - - - Through Hole DO-7 -65°C ~ 175°C
DSC10065 Diodes Incorporated

DSC10065

DIODE SIL CARB 650V 10A TO220AC

Diodes Incorporated

7,449 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 400pF @ 100mV, 1MHz - - Through Hole TO220AC (Type WX) -55°C ~ 175°C
VS-12FL60S05 Vishay General Semiconductor - Diodes Division

VS-12FL60S05

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,102 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-12FLR60S05 Vishay General Semiconductor - Diodes Division

VS-12FLR60S05

DIODE GP REV 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,163 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 50 µA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-60APU06HN3 Vishay General Semiconductor - Diodes Division

VS-60APU06HN3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

6,511 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AC -55°C ~ 175°C
VS-16FL20S02 Vishay General Semiconductor - Diodes Division

VS-16FL20S02

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

2,066 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 16A 1.4 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 50 µA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
SCS306APC9 Rohm Semiconductor

SCS306APC9

DIODE SILICON CARBIDE 650V 6A

Rohm Semiconductor

4,796 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
VS-90APF06L-M3 Vishay General Semiconductor - Diodes Division

VS-90APF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

7,783 -
Datasheet - TO-247-3 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-90EPF06L-M3 Vishay General Semiconductor - Diodes Division

VS-90EPF06L-M3

DIODE GEN PURP 600V 90A TO247AD

Vishay General Semiconductor - Diodes Division

6,529 -
Datasheet - TO-247-2 Tube Active Standard 600 V 90A 1.3 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 190 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N649UR-1/TR Microchip Technology

1N649UR-1/TR

DIODE GP 600V 400MA DO213AA

Microchip Technology

7,297 -
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 600 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 600 V - - - Surface Mount DO-213AA -65°C ~ 175°C
S16B GeneSiC Semiconductor

S16B

DIODE GEN PURP 100V 16A DO203AA

GeneSiC Semiconductor

6,898 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
S16BR GeneSiC Semiconductor

S16BR

DIODE GEN PURP 100V 16A DO220AA

GeneSiC Semiconductor

2,598 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 16A 1.1 V @ 16 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount - -65°C ~ 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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