PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-97PFR120 Vishay General Semiconductor - Diodes Division

VS-97PFR120

DIODE GP REV 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

8,671 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
E4D10120G Wolfspeed, Inc.

E4D10120G

SIC, SCHOTTKY DIODE, 10A, 1200V,

Wolfspeed, Inc.

3,585 -
Datasheet - - Tube Active - - - - - - - - - - - - -
E4D10120E Wolfspeed, Inc.

E4D10120E

SIC, SCHOTTKY DIODE, 10A, 1200V,

Wolfspeed, Inc.

5,912 -
Datasheet - - Tube Obsolete - - - - - - - - - - - - -
JAN1N3612 Microchip Technology

JAN1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

8,804 -
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5614 Microchip Technology

JANTX1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

8,285 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5419/TR Microchip Technology

1N5419/TR

DIODE GEN PURP 500V 3A B SQ-MELF

Microchip Technology

5,014 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
VS-40HF140 Vishay General Semiconductor - Diodes Division

VS-40HF140

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

6,213 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
STPSC10H065DLF STMicroelectronics

STPSC10H065DLF

DIODE SIL CARB 650V 10A PWRFLAT

STMicroelectronics

6,027 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 595pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
1N5803/TR Microchip Technology

1N5803/TR

DIODE GEN PURP 75V 1A

Microchip Technology

9,496 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 75 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N4249/TR Microchip Technology

JAN1N4249/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,399 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5805/TR Microchip Technology

1N5805/TR

DIODE GEN PURP 125V 1A

Microchip Technology

2,507 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
1N5804/TR Microchip Technology

1N5804/TR

DIODE GEN PURP 100V 1A

Microchip Technology

8,341 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-41HF10 Vishay General Semiconductor - Diodes Division

VS-41HF10

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

8,181 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-41HFR10 Vishay General Semiconductor - Diodes Division

VS-41HFR10

DIODE GP REV 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

5,883 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
SCS220AEC Rohm Semiconductor

SCS220AEC

DIODE SIL CARBIDE 650V 20A TO247

Rohm Semiconductor

2,874 -
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
1N646UR-1/TR Microchip Technology

1N646UR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,723 -
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 300 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 200 nA @ 300 V - - - Surface Mount DO-213AA -65°C ~ 175°C
60APU06 Vishay General Semiconductor - Diodes Division

60APU06

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2,992 -
Datasheet FRED Pt® TO-247-3 Tube Obsolete Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 175°C
60EPU06 Vishay General Semiconductor - Diodes Division

60EPU06

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

4,790 -
Datasheet FRED Pt® TO-247-2 Tube Obsolete Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
JAN1N4946/TR Microchip Technology

JAN1N4946/TR

DIODE GEN PURP 600V 1A

Microchip Technology

4,975 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 600 V - Military MIL-PRF-19500/360 Through Hole A, Axial -65°C ~ 175°C
MSC015SDA120K Microchip Technology

MSC015SDA120K

DIODE SIL CARB 1.2KV 36A TO220-2

Microchip Technology

8,508 -
Datasheet - TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 36A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 906pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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