Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UTR62DIODE GEN PURP 600V 2A A AXIAL |
2,118 | - |
|
Datasheet | - | A, Axial | Bulk | Active | Standard | 600 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 600 V | 40pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5419DIODE GEN PURP 500V 3A AXIAL |
9,180 | - |
|
Datasheet | - | B, Axial | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
LSIC2SD120D10DIODE SIL CARB 1.2KV 28A TO263L |
5,546 | - |
|
Datasheet | Gen2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 582pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
JAN1N5420/TRDIODE GEN PURP 600V 3A B AXIAL |
6,191 | - |
|
Datasheet | - | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
WBST080SCM120CGALWWBST080SCM120CGAL/NAU000/NO MARK |
4,318 | - |
|
Datasheet | - | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
LSIC2SD065C16ADIODE SIL CARB 650V 38A TO252 |
9,017 | - |
|
Datasheet | Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
80EPF12DIODE GEN PURP 1.2KV 80A TO247AC |
6,130 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | Standard | 1200 V | 80A | 1.35 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
|
JANTXV1N5417/TRDIODE GEN PURP 200V 3A |
9,598 | - |
|
Datasheet | - | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
121NQ040DIODE SCHOTTKY 40V 120A D-67 |
3,604 | - |
|
Datasheet | - | D-67 HALF-PAK | Bulk | Obsolete | Schottky | 40 V | 120A | 650 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 40 V | 5200pF @ 5V, 1MHz | - | - | Chassis Mount | D-67 HALF-PAK | - |
|
AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 |
3,227 | - |
|
Datasheet | CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
|
CDLL5819E3/TRDIODE SCHOTTKY 45V 1A DO213AB |
3,322 | - |
|
Datasheet | - | DO-213AB, MELF (Glass) | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
|
JANTX1N5419/TRDIODE GEN PURP 500V 3A |
4,929 | - |
|
Datasheet | - | B, Axial | Tape & Reel (TR) | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
UT252DIODE GEN PURP 200V 1A A AXIAL |
4,679 | - |
|
Datasheet | - | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1 V @ 750 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5417USDIODE GEN PURP 200V 3A B SQ-MELF |
6,610 | - |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N4248/TRDIODE GEN PURP 800V 1A |
9,011 | - |
|
Datasheet | - | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
GB10SLT12-220DIODE SIL CARB 1.2KV 10A TO220-2 |
7,227 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CN5179 BK TIN/LEADDIODE GEN PURP 20V DO35 |
7,101 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Box | Obsolete | Standard | 20 V | - | 3.7 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 20 V | - | - | - | Through Hole | DO-35 | -65°C ~ 150°C |
|
JANTX1N5614USDIODE GEN PURP 200V 1A D-5A |
3,826 | - |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | Military | MIL-PRF-19500/437 | Surface Mount | D-5A | -65°C ~ 200°C |
|
SIC20120B-BPInterface |
3,825 | - |
|
Datasheet | - | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-86HF80DIODE GEN PURP 800V 85A DO203AB |
5,650 | - |
|
Datasheet | - | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 800 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.