PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UTR62 Microchip Technology

UTR62

DIODE GEN PURP 600V 2A A AXIAL

Microchip Technology

2,118 -
Datasheet - A, Axial Bulk Active Standard 600 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 600 V 40pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N5419 Microchip Technology

JANTX1N5419

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

9,180 -
Datasheet - B, Axial Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
LSIC2SD120D10 Littelfuse Inc.

LSIC2SD120D10

DIODE SIL CARB 1.2KV 28A TO263L

Littelfuse Inc.

5,546 -
Datasheet Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 28A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 582pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
JAN1N5420/TR Microchip Technology

JAN1N5420/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

6,191 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
WBST080SCM120CGALW WeEn Semiconductors

WBST080SCM120CGALW

WBST080SCM120CGAL/NAU000/NO MARK

WeEn Semiconductors

4,318 -
Datasheet - - Bulk Active - - - - - - - - - - - - -
LSIC2SD065C16A Littelfuse Inc.

LSIC2SD065C16A

DIODE SIL CARB 650V 38A TO252

Littelfuse Inc.

9,017 -
Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 38A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 730pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
80EPF12 Vishay General Semiconductor - Diodes Division

80EPF12

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

6,130 -
Datasheet - TO-247-3 Tube Obsolete Standard 1200 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -65°C ~ 175°C
JANTXV1N5417/TR Microchip Technology

JANTXV1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

9,598 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
121NQ040 Vishay General Semiconductor - Diodes Division

121NQ040

DIODE SCHOTTKY 40V 120A D-67

Vishay General Semiconductor - Diodes Division

3,604 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 40 V 120A 650 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 40 V 5200pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
AIDW40S65C5XKSA1 Infineon Technologies

AIDW40S65C5XKSA1

DIODE SIL CARB 650V 40A TO247-3

Infineon Technologies

3,227 -
Datasheet CoolSiC™ TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 1138pF @ 1V, 1MHz Automotive AEC-Q100/101 Through Hole PG-TO247-3-41 -40°C ~ 175°C
CDLL5819E3/TR Microchip Technology

CDLL5819E3/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

3,322 -
Datasheet - DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 125°C
JANTX1N5419/TR Microchip Technology

JANTX1N5419/TR

DIODE GEN PURP 500V 3A

Microchip Technology

4,929 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
UT252 Microchip Technology

UT252

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,679 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1 V @ 750 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5417US Microchip Technology

JAN1N5417US

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

6,610 -
Datasheet - SQ-MELF, B Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N4248/TR Microchip Technology

JANTXV1N4248/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,011 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
GB10SLT12-220 GeneSiC Semiconductor

GB10SLT12-220

DIODE SIL CARB 1.2KV 10A TO220-2

GeneSiC Semiconductor

7,227 -
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CN5179 BK TIN/LEAD Central Semiconductor Corp

CN5179 BK TIN/LEAD

DIODE GEN PURP 20V DO35

Central Semiconductor Corp

7,101 -
Datasheet - DO-204AH, DO-35, Axial Box Obsolete Standard 20 V - 3.7 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 20 V - - - Through Hole DO-35 -65°C ~ 150°C
JANTX1N5614US Microchip Technology

JANTX1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

3,826 -
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/437 Surface Mount D-5A -65°C ~ 200°C
SIC20120B-BP Micro Commercial Co

SIC20120B-BP

Interface

Micro Commercial Co

3,825 -
Datasheet - TO-220-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
VS-86HF80 Vishay General Semiconductor - Diodes Division

VS-86HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

5,650 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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