PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR40DR05 GeneSiC Semiconductor

FR40DR05

DIODE GEN PURP REV 200V 40A DO5

GeneSiC Semiconductor

3,600 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40GR05 GeneSiC Semiconductor

FR40GR05

DIODE GEN PURP REV 400V 40A DO5

GeneSiC Semiconductor

3,377 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40JR02 GeneSiC Semiconductor

FR40JR02

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

4,084 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR40JR05 GeneSiC Semiconductor

FR40JR05

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

8,289 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
1N6622 Microchip Technology

1N6622

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

3,196 -
Datasheet - A, Axial Bulk Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621 Microchip Technology

1N6621

DIODE GEN PURP 440V 1.2A AXIAL

Microchip Technology

5,112 -
Datasheet - A, Axial Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
1N4949SM/TR Microchip Technology

1N4949SM/TR

UFR,FRR

Microchip Technology

5,973 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - -
LSIC2SD120D15 Littelfuse Inc.

LSIC2SD120D15

DIODE SIL CARB 1.2KV 44A TO263L

Littelfuse Inc.

4,530 -
Datasheet Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 920pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
LSIC2SD120A20A Littelfuse Inc.

LSIC2SD120A20A

DIODE SIC 1.2KV 54.5A TO220L

Littelfuse Inc.

2,730 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1142pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
1N6622E3 Microchip Technology

1N6622E3

DIODE A AXIAL

Microchip Technology

6,063 -
Datasheet - A, Axial Bulk Active - - - 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole A, Axial -
1N6622/TR Microchip Technology

1N6622/TR

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

4,123 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621/TR Microchip Technology

1N6621/TR

DIODE GEN PURP 440V 1.2A

Microchip Technology

8,428 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
SIDC59D170HX1SA2 Infineon Technologies

SIDC59D170HX1SA2

DIODE GP 1.7KV 100A WAFER

Infineon Technologies

3,772 -
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1700 V 100A 1.8 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
JANTXV1N5616 Microchip Technology

JANTXV1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,575 -
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6631/TR Microchip Technology

JAN1N6631/TR

DIODE GEN PURP 1.1KV 1.4A

Microchip Technology

8,559 -
Datasheet - E, Axial Tape & Reel (TR) Active Standard 1100 V 1.4A 1.6 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 1100 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6628/TR Microchip Technology

JAN1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

2,073 -
Datasheet - E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6630/TR Microchip Technology

JAN1N6630/TR

DIODE GEN PURP 900V 1.4A

Microchip Technology

6,688 -
Datasheet - E, Axial Tape & Reel (TR) Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5616/TR Microchip Technology

JANTXV1N5616/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,219 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6547 Microchip Technology

1N6547

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,033 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
1N5829 GeneSiC Semiconductor

1N5829

DIODE SCHOTTKY 20V 25A DO4

GeneSiC Semiconductor

2,508 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Schottky 20 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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