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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PCDB10120G1_R2_00001 Panjit International Inc.

PCDB10120G1_R2_00001

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,350 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 529pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
PCDD10120G1_L2_00001 Panjit International Inc.

PCDD10120G1_L2_00001

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,768 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 529pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDP15120G1_T0_00001 Panjit International Inc.

PCDP15120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 1200 V 815pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP20120G1_T0_00001 Panjit International Inc.

PCDP20120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,993 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1040pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDH20120G1_T0_00601 Panjit International Inc.

PCDH20120G1_T0_00601

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,500 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1023pF @ 1V, 1MHz - - Through Hole TO-247AD-2 -55°C ~ 175°C
PCDB20120G1_R2_00001 Panjit International Inc.

PCDB20120G1_R2_00001

1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,365 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 1040pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
BAS100AS-AU_R1_000A1 Panjit International Inc.

BAS100AS-AU_R1_000A1

SOD-123, SKY

Panjit International Inc.

382 -
Datasheet - SOD-123 Tape & Reel (TR) Active Schottky 100 V 500mA 850 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 1 µA @ 100 V 21pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SOD-123 -55°C ~ 150°C
SS20100FL-AU_R1_000A1 Panjit International Inc.

SS20100FL-AU_R1_000A1

SOD-123FL, SKY

Panjit International Inc.

969 -
Datasheet - SOD-123F Tape & Reel (TR) Active Schottky 100 V 2A 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 40 µA @ 100 V 75pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SOD-123FL -55°C ~ 150°C
MBR1020VL_R1_00001 Panjit International Inc.

MBR1020VL_R1_00001

SOD-123FL, SKY

Panjit International Inc.

187 -
Datasheet - SOD-123F Tape & Reel (TR) Active Schottky 20 V 1A 340 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 20 V - - - Surface Mount SOD-123FL -55°C ~ 125°C
UF4010G_AY_00001 Panjit International Inc.

UF4010G_AY_00001

GLASS PASSIVATED JUNCTION ULTRAF

Panjit International Inc.

812 -
Datasheet - DO-201AD, Axial Cut Tape (CT) Active Standard 1000 V 4A 1.85 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V - - - Through Hole DO-201AD -55°C ~ 150°C
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