PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STTH30AC06FP STMicroelectronics

STTH30AC06FP

DIODE GP 600V 30A TO220FPAC

STMicroelectronics

1,201 -
Datasheet ECOPACK® TO-220-3 Full Pack Tube Active Standard 600 V 30A 1.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 20 µA @ 600 V - - - Through Hole TO-220FPAC 175°C (Max)
APT60DQ120BG Microchip Technology

APT60DQ120BG

DIODE GP 1.2KV 60A TO247

Microchip Technology

194 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 320 ns 100 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
BY4 Diotec Semiconductor

BY4

DIODE GEN PURP 4000V 1A AXIAL

Diotec Semiconductor

1,954 -
Datasheet - Axial Tape & Reel (TR) Active Standard 4000 V 1A 4 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 1 µA @ 4000 V - - - Through Hole Axial -50°C ~ 150°C
VS-10ETS12FP-M3 Vishay General Semiconductor - Diodes Division

VS-10ETS12FP-M3

DIODE GP 1.2KV 10A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,692 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1200 V 10A 1.1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-20ETS08S-M3 Vishay General Semiconductor - Diodes Division

VS-20ETS08S-M3

DIODE GEN PURP 800V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,643 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 800 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 800 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-20ETS12S-M3 Vishay General Semiconductor - Diodes Division

VS-20ETS12S-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

2,229 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 20A 1.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
DURF840 Littelfuse Inc.

DURF840

DIODE GEN PURP 400V 8A ITO220AC

Littelfuse Inc.

6,385 -
Datasheet DUR TO-220-2 Full Pack, Isolated Tab Tube Active Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 400 V - - - Through Hole ITO-220AC -55°C ~ 150°C
VS-HFA08SD60STR-M3 Vishay General Semiconductor - Diodes Division

VS-HFA08SD60STR-M3

DIODE GEN PURP 600V 8A D-PAK

Vishay General Semiconductor - Diodes Division

3,449 -
Datasheet HEXFRED® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
IDD03SG60CXTMA2 Infineon Technologies

IDD03SG60CXTMA2

DIODE SIL CARB 600V 3A TO252-3

Infineon Technologies

2,539 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 3A 2.3 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 600 V 60pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
RFN20TJ6SGC9 Rohm Semiconductor

RFN20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

316 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C (Max)
ACDBA1100LR-HF Comchip Technology

ACDBA1100LR-HF

DIODE SCHOTTKY 100V 1A DO214AC

Comchip Technology

1,448 -
Datasheet - DO-214AC, SMA Tape & Reel (TR) Active Schottky 100 V 1A 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 120pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 150°C
S4D02120E SMC Diode Solutions

S4D02120E

DIODE SIL CARBIDE 1.2KV 2A DPAK

SMC Diode Solutions

6,747 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 116pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
NRVTS30100MFST3G onsemi

NRVTS30100MFST3G

DIODE SCHOTTKY 100V 30A 5DFN

onsemi

3,043 -
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 100 V 30A 760 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 2540pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
IDH04G65C5XKSA2 Infineon Technologies

IDH04G65C5XKSA2

DIODE SIL CARB 650V 4A TO220-2-1

Infineon Technologies

1,631 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
APT30D120BG Microchip Technology

APT30D120BG

DIODE GEN PURP 1.2KV 30A TO247

Microchip Technology

180 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 370 ns 250 µA @ 1200 V - - - Through Hole TO-247 -55°C ~ 175°C
C3D04060E Wolfspeed, Inc.

C3D04060E

DIODE SIL CARB 600V 13.5A TO252

Wolfspeed, Inc.

3,933 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 600 V 13.5A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C3D04060F Wolfspeed, Inc.

C3D04060F

DIODE SIL CARB 600V 9A TO220-F2

Wolfspeed, Inc.

3,228 -
Datasheet Z-Rec® TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 600 V 9A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Through Hole TO-220-F2 -55°C ~ 175°C
C6D04065A Wolfspeed, Inc.

C6D04065A

DIODE SIL CARB 650V 18A TO220-2

Wolfspeed, Inc.

870 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 18A 1.27 V @ 4 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
VS-60APU06-N3 Vishay General Semiconductor - Diodes Division

VS-60APU06-N3

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

282 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 175°C
BY6 Diotec Semiconductor

BY6

DIODE GEN PURP 6000V 1A AXIAL

Diotec Semiconductor

808 -
Datasheet - Axial Tape & Reel (TR) Active Standard 6000 V 1A 6 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 1 µA @ 6000 V - - - Through Hole Axial -50°C ~ 150°C
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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